Nano Electronics
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- 2024
-
Mark
Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor
(
- Contribution to journal › Article
-
Mark
Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
TFET Circuit Configurations Operating below 60 mV/dec
(
- Contribution to journal › Article
-
Mark
Gate-controlled near-surface Josephson junctions
(
- Contribution to journal › Article
-
Mark
III-V Devices for Emerging Electronic Applications
2024)(
- Thesis › Doctoral thesis (compilation)
- 2023
-
Mark
Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
2023) 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 In IEEE International Integrated Reliability Workshop Final Report(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical III-V Nanowire Tunnel Field-Effect Transistors : A Circuit Perspective
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
(
- Contribution to journal › Article
-
Mark
High Current Density Vertical Nanowire TFETs With I₆₀ > 1
μ
A/
μ
m
(
- Contribution to journal › Article