Nano Electronics

141 – 150 of 163

show: 10
|
sort: year (new to old)

News feed Embed this list Save this search Mark all Export

Cancel

Embed this list

copy and paste the html snippet below into your own page:

<iframe src="https://lup.lub.lu.se/search/organization/v1001106?embed=1&amp;hide_pagination=1&amp;hide_info=1&amp;hide_options=1"
  width="100%"
  height="400"
  allowtransparency="true"
  frameborder="0">
</iframe>

2017
Mark III-V MOSFETs for High-Frequency and Digital Applications
Zota, Cezar ^LU (2017)
- Thesis › Doctoral thesis (compilation)
Mark Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
Memisevic, Elvedin ^LU ; Hellenbrand, Markus ^LU ; Lind, Erik ^LU ; Persson, Axel ^LU ; Sant, Saurabh ; Schenk, Andreas ; Svensson, Johannes ^LU ; Wallenberg, Reine ^LU and Wernersson, Lars-Erik ^LU (2017) In Nano Letters
- Contribution to journal › Letter
Mark Vertical III-V Nanowire Tunnel Field-Effect Transistor
Memisevic, Elvedin ^LU (2017)
- Thesis › Doctoral thesis (compilation)
Mark Properties of III-V nanowires : MOSFETs and TunnelFETs
Wernersson, Lars-Erik ^LU (2017) 2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 p.99-100
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark A transmission line model for co-designed slot-coupled dielectric resonator antennas
Ohlsson, Lars ^LU ; Sjöberg, Daniel ^LU and Wernersson, Lars Erik ^LU (2017) 46th European Microwave Conference, EuMC 2016 p.333-336
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I_on = 10 μA/μm for I_off = 1 nA/μm at V_DS = 0.3 V
Memisevic, E. ^LU ; Svensson, J. ^LU ; Hellenbrand, M. ^LU ; Lind, E. ^LU and Wernersson, L. E. ^LU (2017) 62nd IEEE International Electron Devices Meeting, IEDM 2016 p.1-19
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark InGaAs tri-gate MOSFETs with record on-current
Zota, Cezar B. ^LU ; Lindelow, Fredrik ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) 62nd IEEE International Electron Devices Meeting, IEDM 2016 p.1-4
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark First InGaAs lateral nanowire MOSFET RF noise measurements and model
Ohlsson, Lars ^LU ; Lindelow, Fredrik ^LU ; Zota, Cezar B. ^LU ; Ohlrogge, Matthias ; Merkle, Thomas ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) 75th Annual Device Research Conference, DRC 2017
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Record performance for junctionless transistors in InGaAs MOSFETs
Zota, Cezar B. ^LU ; Borg, Mattias ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) 37th Symposium on VLSI Technology, VLSI Technology 2017 p.34-35
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with I_on = 330 μa/μm at I_off = 100 nA/μm and V_D = 0.5 v
Kilpi, Olli Pekka ^LU ; Wu, Jun ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2017) 37th Symposium on VLSI Technology, VLSI Technology 2017 p.36-37
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding