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- 2024
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Mark
Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures
(
- Contribution to journal › Article
- 2023
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Mark
Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
(
- Contribution to journal › Article
-
Mark
Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets
(
- Contribution to journal › Article
- 2021
-
Mark
Coherently strained and dislocation-free architectured AlGaN/GaN submicron-sized structures
(
- Contribution to journal › Article
-
Mark
From InGaN pyramids to micro-LEDs characterized by cathodoluminescence
(
- Contribution to journal › Article
- 2020
-
Mark
Optical microprism cavities based on dislocation-free GaN
(
- Contribution to journal › Article
-
Mark
Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs
(
- Contribution to journal › Article
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Mark
Hot-carrier separation in heterostructure nanowires observed by electron-beam induced current
(
- Contribution to journal › Article
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Mark
Dislocation-Free and Atomically Flat GaN Hexagonal Microprisms for Device Applications
(
- Contribution to journal › Article
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Mark
Local defect-enhanced anodic oxidation of reformed GaN nanowires
(
- Contribution to journal › Article
- 2019
-
Mark
Surface and dislocation investigation of planar GaN formed by crystal reformation of nanowire arrays
(
- Contribution to journal › Article
-
Mark
InGaN Platelets : Synthesis and Applications toward Green and Red Light-Emitting Diodes
2019) In Nano Letters(
- Contribution to journal › Article
- 2018
-
Mark
Self-assembled InN quantum dots on side facets of GaN nanowires
(
- Contribution to journal › Article
-
Mark
High In-content InGaN nano-pyramids : Tuning crystal homogeneity by optimized nucleation of GaN seeds
(
- Contribution to journal › Article
-
Mark
Structural Changes in a Single GaN Nanowire under Applied Voltage Bias
(
- Contribution to journal › Article
- 2017
-
Mark
Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors
(
- Contribution to journal › Article
-
Mark
Defect-induced infrared electroluminescence from radial GaInP/AlGaInP quantum well nanowire array light- emitting diodes
(
- Contribution to journal › Article
- 2016
-
Mark
Wurtzite GaAs Quantum Wires : One-Dimensional Subband Formation
(
- Contribution to journal › Article
- 2015
-
Mark
Study of carrier concentration in single InP nanowires by luminescence and Hall measurements
(
- Contribution to journal › Article
- 2014
-
Mark
Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
(
- Contribution to journal › Article
-
Mark
Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires
(
- Contribution to journal › Article
-
Mark
GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescence
(
- Contribution to journal › Article
-
Mark
Observation of Type II Recombination in Single Wurtzite-Zincblende GaAs Heterojunction Nanowire
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
-
Mark
Correlated Luminescence and Hall Measurements on Single Nanowires
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
-
Mark
InN Quantum Dots on GaN Nanowires Grown by MOVPE
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
-
Mark
Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
-
Mark
InN quantum dots on GaN nanowires grown by MOVPE
2014) 10th International Conference on Nitride Semiconductors (ICNS) In physica status solidi (c) 11. p.421-424(
- Contribution to journal › Article
- 2013
-
Mark
Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires.
(
- Contribution to journal › Article
-
Mark
A luminescence study of doping effects in InP-based radial nanowire structures
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Spatially resolved Hall effect measurements in core-shell InP nanowires
2013) Lund-Tokyo-Copenhagen-Beijing Joint Workhop on Quantum Devices(
- Contribution to conference › Abstract
- 2012
-
Mark
Spatially resolved Hall effect measurement in a single semiconductor nanowire
(
- Contribution to journal › Article
-
Mark
A novel platform enabling spatially resolved electro-optical mapping of NW facets
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Radial InAs quantum structures grown on side-facets of InP nanowires
2012) ICPS 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
Degenerate p-doping of InP nanowires for large area tunnel diodes
(
- Contribution to journal › Article
-
Mark
GaAs-based Nanowires Studied by Low-Temperature Cathodoluminescence
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Diffusion length measurements in axial and radial heterostructured nanowires using cathodoluminescence
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
-
Mark
Low-temperature cathodoluminescence studies of GaAs nanowires in the SEM
(
- Contribution to journal › Article
-
Mark
Determination of diffusion lengths in nanowires using cathodoluminescence
(
- Contribution to journal › Article
-
Mark
Determintation of diffusion legnths in nanowires
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding
- 2009
-
Mark
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
(
- Contribution to journal › Article
-
Mark
Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures
(
- Contribution to journal › Article
- 2007
-
Mark
Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings
(
- Contribution to journal › Article
-
Mark
Locating nanowire heterostructures by electron beam induced current
(
- Contribution to journal › Article
-
Mark
Size-selected compound semiconductor quantum dots by nanoparticle conversion
(
- Contribution to journal › Article
- 2005
-
Mark
Cathodoluminescence Studies of AlGaAs/GaAs Core-Shell Nanowires
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
One-dimensional epitaxial compound semiconductor structures
2005) 10th Intl Symp on Advanced Physical Fields: Fabrication of Nanostr, Tsukuba, Japan (2005), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2004
-
Mark
Epitaxial III-V nanowires on silicon
(
- Contribution to journal › Article
- 2002
-
Mark
Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes
(
- Contribution to journal › Article
-
Mark
Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
(
- Contribution to journal › Article
-
Mark
Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
(
- Contribution to journal › Article
-
Mark
Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings
(
- Contribution to journal › Article
-
Mark
Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
(
- Contribution to journal › Article
-
Mark
Electron beam induced luminescence studies of low-dimensional semiconducotor structures
(
- Chapter in Book/Report/Conference proceeding › Book chapter
- 1993
-
Mark
Reevaluation of blueshifts introduced by lateral confinement in quantum-well wire structures
(
- Contribution to journal › Article