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- 2020
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Mark
Weyl Semi-Metal-Based High-Frequency Amplifiers
(2020) 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 In Technical Digest - International Electron Devices Meeting, IEDM 2019-December.
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
A method for estimating defects in ferroelectric thin film MOSCAPs
- Contribution to journal › Article
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Mark
III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
- Contribution to journal › Article
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Mark
Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
- Contribution to journal › Article
- 2019
-
Mark
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
- Contribution to journal › Article
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Mark
Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
- Contribution to journal › Article
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Mark
Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon
(2019) 92nd ARFTG Microwave Measurement Conference, ARFTG 2019
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Trap-aware compact modeling and power-performance assessment of III-V tunnel FET
(2019) 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
- Contribution to journal › Article
