21 – 40 of 110
- show: 20
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2020
-
Mark
III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
(
- Contribution to journal › Article
-
Mark
Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
(
- Contribution to journal › Article
-
Mark
A method for estimating defects in ferroelectric thin film MOSCAPs
(
- Contribution to journal › Article
- 2019
-
Mark
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
(
- Contribution to journal › Article
-
Mark
Transition to the quantum hall regime in InAs nanowire cross-junctions
(
- Contribution to journal › Article
-
Mark
Integration of InSb on Si by Rapid Melt Growth
2019) 21th International Vacuum Congress(
- Contribution to conference › Abstract
-
Mark
Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2017
-
Mark
Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
(
- Contribution to journal › Article
-
Mark
High-Mobility GaSb Nanostructures Cointegrated with InAs on Si
(
- Contribution to journal › Article
-
Mark
Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon
(
- Contribution to journal › Article
-
Mark
Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects
(
- Contribution to journal › Article
-
Mark
Record performance for junctionless transistors in InGaAs MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Junctionless tri-gate InGaAs MOSFETs
(
- Contribution to journal › Article
- 2016
-
Mark
Length Distributions of Nanowires Growing by Surface Diffusion
(
- Contribution to journal › Article
-
Mark
Local Magnetic Suppression of Topological Surface States in Bi2Te3 Nanowires
(
- Contribution to journal › Article
-
Mark
Autonomy in PhD-education – Supervising for Independence
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Broadening of length distributions of Au-catalyzed InAs nanowires
2016) 5th International Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016 1748.(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 1 : Experimental Devices
(
- Contribution to journal › Article
-
Mark
Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Complementary III-V heterojunction lateral NW Tunnel FET technology on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding