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- 2023
-
Mark
Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs
(
- Contribution to journal › Article
-
Mark
Vertical III-V Nanowires For In-Memory Computing
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
(
- Contribution to journal › Article
- 2022
-
Mark
A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
The Effect of Deposition Conditions on Heterointerface-Driven Band Alignment and Resistive Switching Properties
(
- Contribution to journal › Article
-
Mark
Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
(
- Contribution to journal › Article
-
Mark
Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
(
- Contribution to journal › Article
- 2021
-
Mark
Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation
(
- Contribution to journal › Article
-
Mark
Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration
2021) 2021 Device Research Conference (DRC)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
(
- Contribution to journal › Article
-
Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
(
- Contribution to journal › Article
-
Mark
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
(
- Contribution to journal › Article
- 2020
-
Mark
Low-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
(
- Contribution to journal › Article
-
Mark
Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires
(
- Contribution to journal › Article
- 2019
-
Mark
Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding