Lars-Erik Wernersson
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- 2023
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Mark
High-k/InGaAs interface defects at cryogenic temperature
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- Contribution to journal › Article
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Mark
Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs
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- Contribution to journal › Article
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Mark
gm/Id Analysis of vertical nanowire III–V TFETs
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- Contribution to journal › Article
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Mark
Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
2023) 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 In IEEE International Integrated Reliability Workshop Final Report(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2022
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Mark
The Effect of Deposition Conditions on Heterointerface-Driven Band Alignment and Resistive Switching Properties
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- Contribution to journal › Article
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Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
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- Contribution to journal › Article
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Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
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- Contribution to journal › Article
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Mark
Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
2022) In Applied Surface Science(
- Contribution to journal › Article
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Mark
Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
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- Contribution to journal › Article