Markus Hellenbrand (Former)
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- 2021
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Mark
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
(
- Contribution to journal › Article
- 2020
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Mark
Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
Vertical nanowire III–V MOSFETs with improved high-frequency gain
(
- Contribution to journal › Article
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Mark
Electrical Characterisation of III-V Nanowire MOSFETs
2020) In Series of Licentiate and Doctoral Theses(
- Thesis › Doctoral thesis (compilation)
-
Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
(
- Contribution to journal › Article
- 2019
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Mark
Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) In Microelectronic Engineering(
- Contribution to journal › Article
-
Mark
Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) Insulating Films on Semiconductors (INFOS)(
- Contribution to conference › Paper, not in proceeding
- 2018
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Mark
Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Fabrication of Tunnel Field-Effect Transistors
2018) Swedish Microwave Days 2018(
- Contribution to conference › Paper, not in proceeding
-
Mark
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
(
- Contribution to journal › Article
-
Mark
Capacitance Measurements in Vertical III-V Nanowire TFETs
(
- Contribution to journal › Letter
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Mark
RF Characterisation of Vertical III-V Nanowire Tunnel FETs
2018) Swedish Microwave Days 2018(
- Contribution to conference › Paper, not in proceeding
- 2017
-
Mark
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
1/f and RTS Noise in InGaAs Nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS)(
- Contribution to conference › Paper, not in proceeding
-
Mark
Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
2017) In IEEE Electron Device Letters(
- Contribution to journal › Letter
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Mark
1/f and RTS noise in InGaAs nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55(
- Contribution to journal › Article
-
Mark
Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
2017) p.38-41(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
(
- Contribution to journal › Letter
-
Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
2017) In Nano Letters(
- Contribution to journal › Letter
- 2016
-
Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
(
- Contribution to journal › Letter
-
Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
(
- Contribution to journal › Letter