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- 2020
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Mark
Low-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
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- Contribution to journal › Article
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Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
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- Contribution to journal › Article
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Compressively-strained GaSb nanowires with core-shell heterostructures
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- Contribution to journal › Article
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Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
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- Contribution to journal › Article
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Mark
Mobility of near surface MOVPE grown InGaAs/InP quantum wells
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- Contribution to journal › Article
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Mark
Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
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- Contribution to journal › Article
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Mark
Feature size control using surface reconstruction temperature in block copolymer lithography for InAs nanowire growth
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- Contribution to journal › Article
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III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
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- Contribution to journal › Article
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Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
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- Contribution to journal › Article
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Mark
Weyl Semi-Metal-Based High-Frequency Amplifiers
2020) 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 In Technical Digest - International Electron Devices Meeting, IEDM 2019-December.(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding