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- 2024
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Strong coupling between a microwave photon and a singlet-triplet qubit
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- Contribution to journal › Article
- 2023
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Energetics of Microwaves Probed by Double Quantum Dot Absorption
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- Contribution to journal › Article
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Quantum dot source-drain transport response at microwave frequencies
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- Contribution to journal › Article
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Josephson Junction π-0 Transition Induced by Orbital Hybridization in a Double Quantum Dot
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- Contribution to journal › Article
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Intermediate states in Andreev bound state fusion
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- Contribution to journal › Article
- 2022
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Experimental Verification of the Work Fluctuation-Dissipation Relation for Information-to-Work Conversion
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- Contribution to journal › Article
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Josephson current via spin and orbital states of a tunable double quantum dot
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- Contribution to journal › Article
- 2021
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Gate control, g factors, and spin-orbit energy of p -type GaSb nanowire quantum dot devices
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- Contribution to journal › Article
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Effects of Parity and Symmetry on the Aharonov-Bohm Phase of a Quantum Ring
2021) In Nano Letters(
- Contribution to journal › Article
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Symmetry-controlled singlet-triplet transition in a double-barrier quantum ring
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- Contribution to journal › Article
- 2020
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Magnetic-Field-Independent Subgap States in Hybrid Rashba Nanowires
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- Contribution to journal › Article
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Selective tuning of spin-orbital Kondo contributions in parallel-coupled quantum dots
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- Contribution to journal › Article
- 2019
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Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
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- Contribution to journal › Article
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Spectroscopy of the superconducting proximity effect in nanowires using integrated quantum dots
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- Contribution to journal › Article
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Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers
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- Contribution to journal › Article
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Electrical control of spins and giant g-factors in ring-like coupled quantum dots
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- Contribution to journal › Article
- 2018
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Spectroscopy and level detuning of few-electron spin states in parallel InAs quantum dots
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- Contribution to journal › Article
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Tuning the Two-Electron Hybridization and Spin States in Parallel-Coupled InAs Quantum Dots
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- Contribution to journal › Article
- 2017
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Conduction Band Offset and Polarization Effects in InAs Nanowire Polytype Junctions
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- Contribution to journal › Article
- 2016
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Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates
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- Contribution to journal › Article
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InAs nanowire GAA n-MOSFETs with 12-15 nm diameter
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering
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- Contribution to journal › Article
- 2015
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Sn-Seeded GaAs Nanowires as Self-Assembled Radial p-n Junctions
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- Contribution to journal › Article
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Selective GaSb radial growth on crystal phase engineered InAs nanowires.
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- Contribution to journal › Article
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Characterization of Ambipolar GaSb/InAs Core-Shell Nanowires by Thermovoltage Measurements.
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- Contribution to journal › Article
- 2014
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Electrical properties of GaSb/InAsSb core/shell nanowires
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- Contribution to journal › Article
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High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices
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- Contribution to journal › Article
- 2013
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High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
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- Contribution to journal › Article
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Large Thermoelectric Power Factor Enhancement Observed in InAs Nanowires.
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- Contribution to journal › Article
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Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
(
- Contribution to journal › Article
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Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s
(
- Contribution to journal › Article
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Control and understanding of kink formation in InAs-InP heterostructure nanowires.
(
- Contribution to journal › Article
- 2012
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High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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High-Performance InAs Nanowire MOSFETs
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- Contribution to journal › Article
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Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.
(
- Contribution to journal › Article
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Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
(
- Contribution to journal › Article
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Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires
(
- Contribution to journal › Article
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Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
2012) ICPS 2012(
- Contribution to conference › Abstract
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Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
2012) ICPS 2012(
- Contribution to conference › Abstract
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Mark
Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
- 2011
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Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article
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Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
(
- Contribution to journal › Article
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Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(
- Contribution to journal › Article
- 2009
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Mark
Giant, level-dependent g factors in InSb nanowire quantum dots.
(
- Contribution to journal › Article
- 2008
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Mark
A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire.
(
- Contribution to journal › Article
- 2007
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Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings
(
- Contribution to journal › Article
- 2006
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Nanowire-based multiple quantum dot memory
(
- Contribution to journal › Article
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A nanowire-based multiple quantum dot memory
2006) Semiconductor Nanowires Symposium, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2005
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Mark
One-dimensional epitaxial compound semiconductor structures
2005) 10th Intl Symp on Advanced Physical Fields: Fabrication of Nanostr, Tsukuba, Japan (2005), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Epitaxielle Kristallnadeln und -bäume
2005) DGKK-Jahrestagung, Köln, Germany (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Device properties of InAs/InP nanowire heterostructures
2005) E-MRS Spring Meet, Strasbourg, France (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2004
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Mark
Electrical properties of InAs-based nanowires
2004) Electronic Properties of Synthetic Nanostructures. XVIII International Winterschool/Euroconference on Electronic Properties of Novel Materials 723. p.449-452(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Electron transport in InAs nanowires and heterostructure nanowire devices
(
- Contribution to journal › Article
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Semiconductor nanowires for 0D and 1D physics and applications
(
- Contribution to journal › Article
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Few-electron quantum dots in nanowires
(
- Contribution to journal › Article
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Semiconductor nanowires for novel one-dimensional devices
(
- Contribution to journal › Article
- 2003
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Mark
Single-electron transistors in heterostructure nanowires.
(
- Contribution to journal › Article
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Mark
One dimensional heterostructures and resonant tunneling in III-V nanowires
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Heterostructures incorporated in one-dimensional semiconductor materials and devices
(
- Chapter in Book/Report/Conference proceeding › Book chapter
- 2002
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Mark
One-dimensional heterostructures in semiconductor nanowhiskers
(
- Contribution to journal › Article
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Nanowire resonant tunneling diodes
(
- Contribution to journal › Article
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One-dimensional steeplechase for electrons realized
(
- Contribution to journal › Article
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Mark
Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures
2002) Tenth International Conference on Modulated Semiconductor Structures. MSS 10 13(2-4). p.1126-1130(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Heterointerfaces in III-V semiconductor nanowhiskers
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2000
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Mark
Evaluation of intermittent contact mode AFM probes by HREM and using atomically sharp CeO2 ridges as tip characterizer
(
- Contribution to journal › Article