Nano Electronics
91 – 105 of 150
- show: 15
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2020
-
Mark
Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studies
(
- Contribution to journal › Article
- 2019
-
Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
(
- Contribution to journal › Article
-
Mark
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
(
- Contribution to journal › Article
-
Mark
Millimeter-Wave Radar for Low-Power Applications
2019)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) Insulating Films on Semiconductors (INFOS)(
- Contribution to conference › Paper, not in proceeding
-
Mark
Millimeter-Wave Pulse Radar Scattering Measurements on the Human Hand
(
- Contribution to journal › Article
-
Mark
Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
(
- Contribution to journal › Article
-
Mark
Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon
2019) 92nd ARFTG Microwave Measurement Conference, ARFTG 2019(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Trap-aware compact modeling and power-performance assessment of III-V tunnel FET
2019) 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays : Digital and Analog Figures of Merit from 300K to 10K
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) In Microelectronic Engineering(
- Contribution to journal › Article
-
Mark
Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Fabrication of Tunnel FETs demonstrating sub-thermal subthreshold slope
2019) 21th International Vacuum Congress(
- Contribution to conference › Abstract
-
Mark
Core-shell tfet developments and tfet limitations
2019) 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
(
- Contribution to journal › Article