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- 2024
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Mark
Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures
(
- Contribution to journal › Article
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Mark
Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate
(
- Contribution to journal › Article
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Mark
High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
(
- Contribution to journal › Article
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Mark
Electron effective mass in GaN revisited : New insights from terahertz and mid-infrared optical Hall effect
(
- Contribution to journal › Article
- 2023
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Mark
High-quality N-polar GaN optimization by multi-step temperature growth process
(
- Contribution to journal › Article
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Mark
Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
(
- Contribution to journal › Article
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Mark
Switchable Broadband Terahertz Absorbers Based on Conducting Polymer-Cellulose Aerogels
2023) In Advanced Science(
- Contribution to journal › Article
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Mark
THz Spectroscopic Electron Paramagnetic Resonance of the Fe3+Defect in GaN
2023) 48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023 In International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
(
- Contribution to journal › Article
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Mark
On the thermal conductivity anisotropy in wurtzite GaN
(
- Contribution to journal › Article
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Mark
Observations of very fast electron traps at SiC/high-κ dielectric interfaces
(
- Contribution to journal › Article
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Mark
Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
(
- Contribution to journal › Article
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Mark
The Role of Optical Phonon Confinement in the Infrared Dielectric Response of III–V Superlattices
2023) In Advanced Materials(
- Contribution to journal › Article
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Mark
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
(
- Contribution to journal › Article
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Mark
Thermal conductivity of ScxAl1−xN and YxAl1−xN alloys
(
- Contribution to journal › Article
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Mark
Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
(
- Contribution to journal › Article
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Mark
Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
(
- Contribution to journal › Article
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Mark
Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
(
- Contribution to journal › Article
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Mark
Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
(
- Contribution to journal › Article
- 2022
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Mark
Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect
(
- Contribution to journal › Article
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Mark
Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD
(
- Contribution to journal › Article
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Mark
Doped semiconducting polymer nanoantennas for tunable organic plasmonics
(
- Contribution to journal › Article
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Mark
Strain and Composition Dependencies of the Near-Band-Gap Optical Transitions in Monoclinic (AlxGa1−x)2O3 Alloys with Coherent Biaxial In-Plane Strain on Ga2O3(010)
(
- Contribution to journal › Article
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Mark
On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC
(
- Contribution to journal › Article
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Mark
Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers
2022) 2022 Compound Semiconductor Week, CSW 2022(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Epitaxial growth of
β
-Ga
2
O
3
by hot-wall MOCVD
(
- Contribution to journal › Article
-
Mark
Infrared-active phonon modes and static dielectric constants in -(AlxGa 1-x)2O3(0.18 ≤ x ≤ 0.54) alloys
(
- Contribution to journal › Article
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Mark
Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry : The magnetic response of the nitrogen defect in 4H-SiC
(
- Contribution to journal › Article
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Mark
Linear strain and stress potential parameters for the three fundamental band to band transitions in β-Ga2O3
(
- Contribution to journal › Article
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Mark
Mg-doping and free-hole properties of hot-wall MOCVD GaN
(
- Contribution to journal › Article
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Mark
Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN : Understanding Nucleation and Design of Growth Strategies
(
- Contribution to journal › Article
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Mark
Thermal conductivity of AlxGa1−xN (0≤x≤1) epitaxial layers
(
- Contribution to journal › Article
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Mark
Mg segregation at inclined facets of pyramidal inversion domains in GaN:Mg
(
- Contribution to journal › Article
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Mark
Electrical Tuning of Plasmonic Conducting Polymer Nanoantennas
(
- Contribution to journal › Article
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Mark
The 2022 magneto-optics roadmap
(
- Contribution to journal › Scientific review
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Mark
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
(
- Contribution to journal › Article