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- 2024
-
Mark
TFET Circuit Configurations Operating below 60 mV/dec
(
- Contribution to journal › Article
-
Mark
III-V Devices for Emerging Electronic Applications
2024)(
- Thesis › Doctoral thesis (compilation)
- 2023
-
Mark
In-situ Study of the Growth, Composition and Morphology of III-V Semiconductor Nanowires
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Artificial nanophotonic neuron with internal memory for biologically inspired and reservoir network computing
(
- Contribution to journal › Article
-
Mark
Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs
(
- Contribution to journal › Article
-
Mark
Adventures of III-V Semiconductor Surfaces
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform
(
- Thesis › Doctoral thesis (compilation)
-
Mark
Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
(
- Contribution to journal › Article
- 2022
-
Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
(
- Contribution to journal › Article
-
Mark
Realization of axially defined GaInP/InP/InAsP triple-junction photovoltaic nanowires for high-performance solar cells
(
- Contribution to journal › Article
-
Mark
InGaAs Nanowire and Quantum Well Devices
2022)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Surface modification of III-V nanostructures studied by low-temperature scanning tunneling microscopy
2022)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
(
- Contribution to journal › Article
-
Mark
Observation of the Multilayer Growth Mode in Ternary InGaAs Nanowires
(
- Contribution to journal › Article
-
Mark
Simulating Vapor-Liquid-Solid Growth of Au-Seeded InGaAs Nanowires
(
- Contribution to journal › Article
-
Mark
Ferroelectric-Antiferroelectric Transition of Hf1- xZrxO2on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2
(
- Contribution to journal › Article
- 2021
-
Mark
III-V Nanowire MOSFET High-Frequency Technology Platform
2021)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
(
- Contribution to journal › Article
-
Mark
Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
2021)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Kinetic and Thermodynamic Modeling of Nanowire Growth
2021)(
- Thesis › Doctoral thesis (compilation)
-
Mark
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
(
- Contribution to journal › Article
- 2020
-
Mark
Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Electrical Characterisation of III-V Nanowire MOSFETs
2020) In Series of Licentiate and Doctoral Theses(
- Thesis › Doctoral thesis (compilation)
- 2019
-
Mark
Vertical III-V Nanowire MOSFETs
2019) In Series of licentiate and doctoral theses(
- Thesis › Doctoral thesis (compilation)
-
Mark
Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) In Microelectronic Engineering(
- Contribution to journal › Article
- 2018
-
Mark
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
(
- Contribution to journal › Article
-
Mark
A Self-aligned Gate-last Process applied to All-III-V CMOS on Si
(
- Contribution to journal › Article
-
Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
(
- Contribution to journal › Article
-
Mark
Nanobeam X-ray Fluorescence Dopant Mapping Reveals Dynamics of in Situ Zn-Doping in Nanowires
(
- Contribution to journal › Article
-
Mark
Capacitance Measurements in Vertical III-V Nanowire TFETs
(
- Contribution to journal › Letter
- 2017
-
Mark
Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
2017) In IEEE Electron Device Letters(
- Contribution to journal › Letter
-
Mark
Bipolar Photothermoelectric Effect Across Energy Filters in Single Nanowires
(
- Contribution to journal › Article
-
Mark
III-V MOSFETs for High-Frequency and Digital Applications
2017)(
- Thesis › Doctoral thesis (compilation)
- 2016
-
Mark
High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
(
- Contribution to journal › Article
-
Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
(
- Contribution to journal › Letter
- 2015
-
Mark
III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si
(
- Contribution to journal › Article
-
Mark
Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogen
(
- Contribution to journal › Article
-
Mark
Atomic Scale Surface Structure and Morphology of InAs Nanowire Crystal Superlattices: The Effect of Epitaxial Overgrowth
(
- Contribution to journal › Article
-
Mark
High Frequency InGaAs Nanowire MOSFETs
2015) 37th IEEE International Symposium on Workload Characterization, IISWC 2015(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2014
-
Mark
High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
-
Mark
In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
(
- Contribution to journal › Article
-
Mark
Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Hard X-ray Detection Using a Single nm Diameter Nanowire
(
- Contribution to journal › Article
-
Mark
High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices
(
- Contribution to journal › Article
-
Mark
Optical Characterization of III-Nitride and II-V Semiconductor Nanowires
2014)(
- Thesis › Doctoral thesis (monograph)
- 2012
-
Mark
Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates
(
- Contribution to journal › Article
- 2010
-
Mark
III-V Nanowires-Extending a Narrowing Road
(
- Contribution to journal › Article
- 2008
-
Mark
Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
(
- Contribution to journal › Article
-
Mark
Selective etching of III-V nanowires for molecular junctions
(
- Contribution to journal › Article
-
Mark
Semiconductor Nanowires: Epitaxy and Applications
2008)(
- Thesis › Doctoral thesis (compilation)