Erik Lind
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- 2013
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Mark
Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
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Mark
A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
(
- Contribution to journal › Article
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Mark
Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
(
- Contribution to journal › Article
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Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
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Mark
Characterization of Border Traps in III-V MOSFETs Using an RF Transconductance Method
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
1/f-noise in Vertical InAs Nanowire Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
(
- Contribution to journal › Article
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Mark
Extraction of oxide traps in III-V MOSFETs using RF transconductance measurements
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
(
- Contribution to journal › Article
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Mark
GaSb nanowire pFETs for III-V CMOS
2013) 71th Annual Device Research Conference (DRC) In IEEE Device Research Conference. Proceedings p.13-14(
- Contribution to journal › Published meeting abstract
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Mark
RF reliability of gate last InGaAs nMOSFETs with high-k dielectric
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2012
-
Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract
-
Mark
High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
(
- Contribution to journal › Article
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Mark
High-Performance InAs Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
(
- Contribution to journal › Article
-
Mark
Performance Evaluation of III–V Nanowire Transistors
(
- Contribution to journal › Article
-
Mark
Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
(
- Contribution to journal › Article
-
Mark
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
(
- Contribution to journal › Article
-
Mark
High-k oxides on InAs 100 and 111B surfaces
2012) 5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS) 45(3). p.61-67(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353(
- Contribution to journal › Article
-
Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
2012) GigaHertz Symposium 2012(
- Contribution to conference › Paper, not in proceeding
-
Mark
InAs Nanowires for High Frequency Electronics
2012) GigaHertz Symposium 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode
(
- Contribution to journal › Article
-
Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
(
- Contribution to journal › Article
-
Mark
Bias Stabilization of Negative Differential Conductance Oscillators Operated in Pulsed Mode
(
- Contribution to journal › Article
-
Mark
Impulse-based 4 Gbit/s radio link at 60 GHz
(
- Contribution to journal › Article
-
Mark
60 GHz impulse radio measurements
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Design of RF Properties for Vertical Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
(
- Contribution to journal › Article
-
Mark
Temperature and annealing effects on InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
2011) IEEE International Electron Devices Meeting (IEDM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
15 nm diameter InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Inverter circuits based on vertical InAs nanowire MOSFETs
2011) Swedish System-on-Chip Conference, SSoCC 2011(
- Contribution to conference › Paper, not in proceeding
-
Mark
Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers
2011) 69th Device Research Conference, DRC 2011(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
-
Mark
Coherent V-Band Pulse Generator for Impulse Radio BPSK
(
- Contribution to journal › Article
-
Mark
Gated Tunnel Diode with a Reactive Bias Stabilizing Network for 60 GHz Impulse Radio Implementations
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High Frequency Performance of Vertical InAs Nanowire MOSFET
2010) 22nd International Conference on Indium Phosphide and Related Materials(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Low-frequency noise in vertical InAs nanowire FETs
(
- Contribution to journal › Article
-
Mark
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
(
- Contribution to journal › Article
-
Mark
III-V Nanowires-Extending a Narrowing Road
(
- Contribution to journal › Article
-
Mark
Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
(
- Contribution to journal › Letter
-
Mark
Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
(
- Contribution to journal › Article
-
Mark
Modelling and optimization of III/V transistors with matrices of nanowires
(
- Contribution to journal › Article
-
Mark
Temperature dependent properties of InSb and InAs nanowire field-effect transistors
(
- Contribution to journal › Article
-
Mark
Admittance Matching of 60 GHz Rectangular Dielectric Resonator Antennas for Integrated Impulse Radio
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Tunneling-based devices and circuits
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding