Erik Lind
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- 2017
-
Mark
Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article
-
Mark
Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
2017) p.38-41(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
(
- Contribution to journal › Letter
-
Mark
Junctionless tri-gate InGaAs MOSFETs
(
- Contribution to journal › Article
-
Mark
1/f and RTS noise in InGaAs nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55(
- Contribution to journal › Article
-
Mark
Gated Hall effect measurements on selectively grown InGaAs nanowires
(
- Contribution to journal › Article
- 2016
-
Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
(
- Contribution to journal › Article
-
Mark
Ballistic modeling of InAs nanowire transistors
(
- Contribution to journal › Article
-
Mark
Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz
(
- Contribution to journal › Article
-
Mark
InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v
2016) 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High frequency III-V nanowire MOSFETs
(
- Contribution to journal › Scientific review
-
Mark
Size-effects in indium gallium arsenide nanowire field-effect transistors
(
- Contribution to journal › Article
-
Mark
Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
(
- Contribution to journal › Article
-
Mark
Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric
(
- Contribution to journal › Article
-
Mark
ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment
(
- Contribution to journal › Article
-
Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
(
- Contribution to journal › Letter
-
Mark
Single suspended InGaAs nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Amplifier Design Using Vertical InAs Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
(
- Contribution to journal › Article
-
Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
(
- Contribution to journal › Letter
- 2015
-
Mark
InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs
(
- Contribution to journal › Article
-
Mark
A transmission line method for evaluation of vertical InAs nanowire contacts
(
- Contribution to journal › Article
-
Mark
Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric
(
- Contribution to journal › Article
-
Mark
Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires
(
- Contribution to journal › Article
-
Mark
High Frequency InGaAs Nanowire MOSFETs
2015) 37th IEEE International Symposium on Workload Characterization, IISWC 2015(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs/GaSb Nanowire Axial TFETs Integrated on Si-substrates
2015) Compound Semiconductor Week 2015(
- Contribution to conference › Paper, not in proceeding
-
Mark
III-V Heterostructure Nanowire Tunnel FETs
(
- Contribution to journal › Article
- 2014
-
Mark
High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
-
Mark
RF and DC Analysis of Stressed InGaAs MOSFETs
(
- Contribution to specialist publication or newspaper › Specialist publication article
-
Mark
High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
(
- Contribution to journal › Article
-
Mark
Intrinsic Performance of InAs Nanowire Capacitors
(
- Contribution to journal › Article
-
Mark
RF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
(
- Contribution to journal › Article
-
Mark
In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs nanowire MOSFET differential active mixer on Si-substrate
(
- Contribution to journal › Article
-
Mark
High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Design of Radial Nanowire Tunnel Field-Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering
(
- Contribution to journal › Article
-
Mark
Asymmetric InGaAs MOSFETs with InGaAs source and InP drain
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
In GaAs MOSFETs with InP Drain
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors
(
- Contribution to journal › Article
-
Mark
Modeling of n-InAs metal oxide semiconductor capacitors with high-kappa gate dielectric
(
- Contribution to journal › Article
-
Mark
InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.
(
- Contribution to journal › Article
-
Mark
Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors
(
- Contribution to journal › Article