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- 2023
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Mark
New high-resolution SiO2-based positive-tone resist for electron beam lithography
2023) 49-th International Conference on Micro- and Nano-Engineering(
- Contribution to conference › Poster
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Mark
Damage Analysis of Reactive Ion and Quasi-Atomic Layer Etched Silicon
2023) 23-rd International Conference on Atomic Layer Deposition(
- Contribution to conference › Abstract
- 2022
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Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
(
- Contribution to journal › Article
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Mark
Comparison of UV-curable materials for high-resolution polymer nanoimprint stamps
(
- Contribution to journal › Article
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Mark
Investigating the Secondary Electron Emission of Nanomaterials Induced by a High-Resolution Proton Beam
2022) In Physica Status Solidi (B)(
- Contribution to journal › Article
-
Mark
Sequential Infiltration Synthesis into Maltoheptaose and Poly(styrene): Implications for Sub-10 nm Pattern Transfer
(
- Contribution to journal › Article
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Mark
Tolerance of metal halide perovskites to mechanical treatment enables the fabrication of patterned luminescence nano- and microstructures
(
- Contribution to journal › Article
- 2021
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Mark
Sequential infiltration synthesis and pattern transfer using 6 nm half-pitch carbohydrate-based fingerprint block copolymer
2021) Advances in Patterning Materials and Processes XXXVIII 2020 In Proceedings of SPIE - The International Society for Optical Engineering 11612.(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Poly(styrene)- block-Maltoheptaose Films for Sub-10 nm Pattern Transfer : Implications for Transistor Fabrication
(
- Contribution to journal › Article
- 2020
-
Mark
Feature size control using surface reconstruction temperature in block copolymer lithography for InAs nanowire growth
(
- Contribution to journal › Article
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Mark
Wafer-scale nanofabrication of sub-100 nm arrays by deep-UV displacement Talbot lithography
(
- Contribution to journal › Article
- 2019
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Mark
Design and development of nanoimprint-enabled structures for molecular motor devices
(
- Contribution to journal › Article
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Mark
Displacement Talbot Lithography for Fabrication of Large Area Nanoimprint Stamps
2019) 45-th International Conference on Micro and Nano Engineering(
- Contribution to conference › Poster
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Mark
Novel Lift-off Process for DUV Displacement Talbot Lithography
2019)(
- Contribution to conference › Poster
-
Mark
Sub-10 nm Block Copolymer Lithography: Sequential Infiltration Synthesis into Poly(Styrene)-block-Maltoheptaose
2019) 5-th DSA Symposium(
- Contribution to conference › Poster
- 2018
-
Mark
Nanoimprint stamps with ultra-high resolution : Optimal fabrication techniques
(
- Contribution to journal › Article
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Mark
Block Copolymer Nanopatterning of Dielectric Mask for Selective Area InAs Vertical Nanowire Growth
2018) 4-th International Symposium on DSA, November 11-13, 2018, Sapporo, Japan(
- Contribution to conference › Abstract
-
Mark
High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching
(
- Contribution to journal › Article
- 2017
-
Mark
Carbohydrate-based block copolymer systems : Directed self-assembly for nanolithography applications
(
- Contribution to journal › Article
-
Mark
A Method for Investigation of Size-Dependent Protein Binding to Nanoholes Using Intrinsic Fluorescence of Proteins
(
- Contribution to journal › Article
- 2016
-
Mark
Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography
(
- Contribution to journal › Article
- 2015
-
Mark
Scalable, high performance, enzymatic cathodes based on nanoimprint lithography
(
- Contribution to journal › Article
-
Mark
Transparent and flexible, nanostructured and mediatorless glucose/oxygen enzymatic fuel cells
(
- Contribution to journal › Article
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Mark
III-V Nanowire Synthesis by Use of Electrodeposited Gold Particles.
(
- Contribution to journal › Article
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Mark
Concept for assembling individual nanostructure-based components into complex devices
(
- Contribution to journal › Article
- 2014
-
Mark
Efficient ultra-thin transmission silicon detectors for a single-ion irradiation system at the Lund Ion Beam Analysis Facility
(
- Contribution to journal › Article
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Mark
Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning
(
- Contribution to journal › Article
-
Mark
The influence of nanoparticles on enzymatic bioelectrocatalysis
(
- Contribution to journal › Article
- 2013
-
Mark
Dynamic Guiding of Motor-Driven Microtubules on Electrically Heated, Smart Polymer Tracks
(
- Contribution to journal › Article
-
Mark
Fabrication and Characterization of Ultra-Thin PIN Silicon Detectors for Counting the Passage of MeV Ions
(
- Contribution to journal › Article
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Mark
Enhanced Anisotropic Effective g Factors of an Al10.25Ga0.75N/GaN Heterostructure Based Quantum Point Contact
(
- Contribution to journal › Article
- 2012
-
Mark
Digital in-line holography on amplitude and phase objects prepared with electron beam lithography.
(
- Contribution to journal › Article
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Mark
Optimization of a self-closing effect to produce nanochannels with top slits in fused silica
(
- Contribution to journal › Article
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Mark
Fabrication of bottle-shaped nanochannels in fused silica using a self-closing effect
(
- Contribution to journal › Article
-
Mark
The c-axis thermal conductivity of graphite film of nanometer thickness measured by time resolved X-ray diffraction
(
- Contribution to journal › Article
- 2011
-
Mark
Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode
(
- Contribution to journal › Article
-
Mark
Efficient methods of nanoimprint stamp cleaning based on imprint self-cleaning effect.
(
- Contribution to journal › Article
-
Mark
Fabrication and characterization of bilayer metal wire-grid polarizer using nanoimprint lithography on flexible plastic substrate
(
- Contribution to journal › Article
- 2010
-
Mark
Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-kappa dielectric
(
- Contribution to journal › Article
-
Mark
Nonlinear electrical properties of Si three-terminal junction devices
(
- Contribution to journal › Article
- 2009
-
Mark
Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
(
- Contribution to journal › Article
-
Mark
Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2008
-
Mark
Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP
(
- Contribution to journal › Article
-
Mark
Novel room-temperature functional analogue and digital nanoelectronic circuits based on three-terminal ballistic junctions and planar quantum-wire transistors
2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.052073-052073(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A sequential logic device realized by integration of in-plane gate transistors in InGaAs/InP
(
- Contribution to journal › Article
-
Mark
A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP
(
- Contribution to journal › Article
-
Mark
Electrical properties of self-assembled branched InAs nanowire junctions
(
- Contribution to journal › Article
- 2007
-
Mark
Frequency mixing and phase detection functionalities of three-terminal ballistic junctions
(
- Contribution to journal › Article
-
Mark
Novel nanoelectronic device applications based on the nonlinearity of three-terminal ballistic junctions
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Sulfur passivation for ohmic contact formation to InAs nanowires
(
- Contribution to journal › Article