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- 2024
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Mark
TFET Circuit Configurations Operating below 60 mV/dec
(
- Contribution to journal › Article
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Mark
Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
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Mark
A Reconfigurable Ferroelectric Transistor as An Ultra-Scaled Cell for Low-Power In-Memory Data Processing
2024) In Advanced Electronic Materials(
- Contribution to journal › Article
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Mark
Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor
(
- Contribution to journal › Article
- 2023
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Mark
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
(
- Contribution to journal › Article
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Mark
Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
(
- Contribution to journal › Article
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Mark
Sensing single domains and individual defects in scaled ferroelectrics
(
- Contribution to journal › Article
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Mark
Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
2023) 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 In IEEE International Integrated Reliability Workshop Final Report(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts
(
- Contribution to journal › Article
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Mark
Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec
(
- Contribution to journal › Article
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Mark
High-k/InGaAs interface defects at cryogenic temperature
(
- Contribution to journal › Article
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Mark
High Current Density Vertical Nanowire TFETs With I₆₀ > 1
μ
A/
μ
m
(
- Contribution to journal › Article
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Mark
Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs
(
- Contribution to journal › Article
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Mark
gm/Id Analysis of vertical nanowire III–V TFETs
(
- Contribution to journal › Article
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Mark
Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2022
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Mark
Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
(
- Contribution to journal › Article
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Mark
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
(
- Contribution to journal › Article
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Mark
As-deposited ferroelectric HZO on a III–V semiconductor
(
- Contribution to journal › Article
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Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
(
- Contribution to journal › Article
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Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
(
- Contribution to journal › Article