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- 2023
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Mark
Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators
2023) In Advanced Intelligent Systems(
- Contribution to journal › Article
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Mark
Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten
(
- Contribution to journal › Article
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Mark
Impact of Temperature-Induced Oxide Defects on HfxZr1−xO2 Ferroelectric Tunnel Junction Memristor Performance
(
- Contribution to journal › Article
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Mark
Accelerating AI using next-generation hardware : Possibilities and challenges with analog in-memory computing
2023) 2023 IEEE/CVF Winter Conference on Applications of Computer Vision Workshops, WACVW 2023 p.488-496(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Monolithic InSb nanostructure photodetectors on Si using rapid melt growth
(
- Contribution to journal › Article
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Mark
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
(
- Contribution to journal › Article
- 2022
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Mark
Advantages of binary stochastic synapses for hardware spiking neural networks with realistic memristors
(
- Contribution to journal › Article
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Mark
Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2
(
- Contribution to journal › Article
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Mark
Advantage of Binary Stochastic synapses for hardware Spiking Neural Networks with realistic memristors
(
- Contribution to journal › Article
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Mark
Template-Assisted Selective Epitaxy of InAs on W
2022) 2022 Compound Semiconductor Week, CSW 2022(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
(
- Contribution to journal › Article
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Mark
Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth
(
- Contribution to journal › Article
- 2021
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Mark
Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2
(
- Contribution to journal › Article
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Mark
Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2) : Raman spectroscopy and magnetic properties
(
- Contribution to journal › Article
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Mark
Optimization of Near-Surface Quantum Well Processing
(
- Contribution to journal › Article
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Mark
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
(
- Contribution to journal › Article
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Mark
Improved quality of InSb-on-insulator microstructures by flash annealing into melt
(
- Contribution to journal › Article
- 2020
-
Mark
A method for estimating defects in ferroelectric thin film MOSCAPs
(
- Contribution to journal › Article
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Mark
Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires
(
- Contribution to journal › Article
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Mark
III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
(
- Contribution to journal › Article
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Mark
Low-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
(
- Contribution to journal › Article
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Mark
Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
(
- Contribution to journal › Article
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Mark
Mobility of near surface MOVPE grown InGaAs/InP quantum wells
(
- Contribution to journal › Article
- 2019
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Mark
Transition to the quantum hall regime in InAs nanowire cross-junctions
(
- Contribution to journal › Article
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Mark
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
(
- Contribution to journal › Article
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Mark
Integration of InSb on Si by Rapid Melt Growth
2019) 21th International Vacuum Congress(
- Contribution to conference › Abstract
-
Mark
Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2017
-
Mark
High-Mobility GaSb Nanostructures Cointegrated with InAs on Si
(
- Contribution to journal › Article
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Mark
Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon
(
- Contribution to journal › Article
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Mark
Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects
(
- Contribution to journal › Article
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Mark
Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
(
- Contribution to journal › Article
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Mark
Record performance for junctionless transistors in InGaAs MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Junctionless tri-gate InGaAs MOSFETs
(
- Contribution to journal › Article
- 2016
-
Mark
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 1 : Experimental Devices
(
- Contribution to journal › Article
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Mark
Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Complementary III-V heterojunction lateral NW Tunnel FET technology on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
III-V heterojunction nanowire tunnel FETs monolithically integrated on silicon
2016) 11th IEEE Nanotechnology Materials and Devices Conference, NMDC 2016(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 2 : Simulation Study of the Impact of Interface Traps
(
- Contribution to journal › Article
-
Mark
Autonomy in PhD-education – Supervising for Independence
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Broadening of length distributions of Au-catalyzed InAs nanowires
2016) 5th International Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016 1748.(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Length Distributions of Nanowires Growing by Surface Diffusion
(
- Contribution to journal › Article
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Mark
Local Magnetic Suppression of Topological Surface States in Bi2Te3 Nanowires
(
- Contribution to journal › Article
- 2015
-
Mark
Fabrication and analysis of vertical p-type InAs-Si nanowire tunnel FETs
2015) 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 p.61-64(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si
(
- Contribution to journal › Article
-
Mark
Template-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si
(
- Contribution to journal › Article
-
Mark
III-V device integration on Si using template-assisted selective epitaxy
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates
(
- Contribution to journal › Article
- 2014
-
Mark
Measurements of light absorption efficiency in InSb nanowires
(
- Contribution to journal › Article
-
Mark
Time-Resolved X-ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires.
(
- Contribution to journal › Article
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Mark
Vertical III-V nanowire device integration on Si(100)
(
- Contribution to journal › Article