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- 2023
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Mark
Impact of Temperature-Induced Oxide Defects on HfxZr1−xO2 Ferroelectric Tunnel Junction Memristor Performance
(
- Contribution to journal › Article
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Mark
Accelerating AI using next-generation hardware : Possibilities and challenges with analog in-memory computing
2023) 2023 IEEE/CVF Winter Conference on Applications of Computer Vision Workshops, WACVW 2023 p.488-496(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten
(
- Contribution to journal › Article
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Mark
Monolithic InSb nanostructure photodetectors on Si using rapid melt growth
(
- Contribution to journal › Article
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Mark
Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators
2023) In Advanced Intelligent Systems(
- Contribution to journal › Article
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Mark
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
(
- Contribution to journal › Article
- 2022
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Mark
Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2
(
- Contribution to journal › Article
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Advantage of Binary Stochastic synapses for hardware Spiking Neural Networks with realistic memristors
(
- Contribution to journal › Article
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Mark
Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth
(
- Contribution to journal › Article
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Mark
Advantages of binary stochastic synapses for hardware spiking neural networks with realistic memristors
(
- Contribution to journal › Article
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Mark
Template-Assisted Selective Epitaxy of InAs on W
2022) 2022 Compound Semiconductor Week, CSW 2022(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
(
- Contribution to journal › Article
- 2021
-
Mark
Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2
(
- Contribution to journal › Article
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Mark
Improved quality of InSb-on-insulator microstructures by flash annealing into melt
(
- Contribution to journal › Article
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Mark
Optimization of Near-Surface Quantum Well Processing
(
- Contribution to journal › Article
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Mark
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
(
- Contribution to journal › Article
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Mark
Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2) : Raman spectroscopy and magnetic properties
(
- Contribution to journal › Article
- 2020
-
Mark
Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires
(
- Contribution to journal › Article
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Mark
Low-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
(
- Contribution to journal › Article
-
Mark
Mobility of near surface MOVPE grown InGaAs/InP quantum wells
(
- Contribution to journal › Article
-
Mark
Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
(
- Contribution to journal › Article
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Mark
III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
(
- Contribution to journal › Article
-
Mark
A method for estimating defects in ferroelectric thin film MOSCAPs
(
- Contribution to journal › Article
- 2019
-
Mark
Transition to the quantum hall regime in InAs nanowire cross-junctions
(
- Contribution to journal › Article
-
Mark
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
(
- Contribution to journal › Article
-
Mark
Integration of InSb on Si by Rapid Melt Growth
2019) 21th International Vacuum Congress(
- Contribution to conference › Abstract
-
Mark
Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2017
-
Mark
Record performance for junctionless transistors in InGaAs MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Junctionless tri-gate InGaAs MOSFETs
(
- Contribution to journal › Article
-
Mark
Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
(
- Contribution to journal › Article
-
Mark
High-Mobility GaSb Nanostructures Cointegrated with InAs on Si
(
- Contribution to journal › Article
-
Mark
Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon
(
- Contribution to journal › Article
-
Mark
Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects
(
- Contribution to journal › Article
- 2016
-
Mark
Autonomy in PhD-education – Supervising for Independence
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Broadening of length distributions of Au-catalyzed InAs nanowires
2016) 5th International Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016 1748.(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Length Distributions of Nanowires Growing by Surface Diffusion
(
- Contribution to journal › Article
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Mark
Local Magnetic Suppression of Topological Surface States in Bi2Te3 Nanowires
(
- Contribution to journal › Article
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Mark
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 1 : Experimental Devices
(
- Contribution to journal › Article
-
Mark
Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Complementary III-V heterojunction lateral NW Tunnel FET technology on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
III-V heterojunction nanowire tunnel FETs monolithically integrated on silicon
2016) 11th IEEE Nanotechnology Materials and Devices Conference, NMDC 2016(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 2 : Simulation Study of the Impact of Interface Traps
(
- Contribution to journal › Article
- 2015
-
Mark
Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si
(
- Contribution to journal › Article
-
Mark
Template-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si
(
- Contribution to journal › Article
-
Mark
III-V device integration on Si using template-assisted selective epitaxy
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates
(
- Contribution to journal › Article
-
Mark
Fabrication and analysis of vertical p-type InAs-Si nanowire tunnel FETs
2015) 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 p.61-64(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2014
-
Mark
Measurements of light absorption efficiency in InSb nanowires
(
- Contribution to journal › Article
-
Mark
Time-Resolved X-ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires.
(
- Contribution to journal › Article
-
Mark
Vertical III-V nanowire device integration on Si(100)
(
- Contribution to journal › Article
-
Mark
III-V semiconductor nanowires for future devices
2014) 17th Design, Automation and Test in Europe, DATE 2014(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2013
-
Mark
Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
-
Mark
Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrays
(
- Contribution to journal › Article
-
Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy
(
- Contribution to journal › Article
-
Mark
Synthesis and properties of antimonide nanowires
(
- Contribution to journal › Scientific review
-
Mark
Diameter Limitation in Growth of III-Sb-Containing Nanowire Heterostructures.
(
- Contribution to journal › Article
-
Mark
Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors.
(
- Contribution to journal › Article
-
Mark
GaSb nanowire pFETs for III-V CMOS
2013) 71th Annual Device Research Conference (DRC) In IEEE Device Research Conference. Proceedings p.13-14(
- Contribution to journal › Published meeting abstract
-
Mark
Exploring the diameter limitation in III-Sb heterostructure growth
2013) 7th Nanowire growth workshop, 2013(
- Contribution to conference › Abstract
- 2012
-
Mark
Controlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir Effect
(
- Contribution to journal › Article
-
Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Single InAs/GaSb Nanowire Low-Power CMOS Inverter
2012) In Nano Letters(
- Contribution to journal › Article
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract
-
Mark
High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
(
- Contribution to journal › Article
-
Mark
High-Performance InAs Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors
(
- Contribution to journal › Article
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Mark
In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
(
- Contribution to journal › Article
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Mark
Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
(
- Contribution to journal › Article
-
Mark
Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
(
- Contribution to journal › Article
-
Mark
Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires
(
- Contribution to journal › Article
-
Mark
Highly controlled InAs nanowires on Si(111) wafers by MOVPE
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week 9(2).(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates
(
- Contribution to journal › Article
-
Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353(
- Contribution to journal › Article
-
Mark
Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
-
Mark
Heterointerface Control in III-V Semiconductor Nanowires
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
-
Mark
InAs Nanowires for High Frequency Electronics
2012) GigaHertz Symposium 2012(
- Contribution to conference › Abstract
-
Mark
Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
2012) GigaHertz Symposium 2012(
- Contribution to conference › Paper, not in proceeding
-
Mark
Antimonide Heterostructure Nanowires - Growth, Physics and Devices
2012)(
- Thesis › Doctoral thesis (compilation)
- 2011
-
Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
(
- Contribution to journal › Article
-
Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article
-
Mark
GaSb nanowire single-hole transistor
(
- Contribution to journal › Article
-
Mark
Temperature and annealing effects on InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
(
- Contribution to journal › Article
-
Mark
Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
(
- Contribution to journal › Article
-
Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
(
- Contribution to journal › Article
-
Mark
High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
2011) IEEE International Electron Devices Meeting (IEDM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(
- Contribution to journal › Article
-
Mark
15 nm diameter InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Compositional grading of axial heterojunctions in metal particle seeded III - V semiconductor nanowires.
2011) MRS Fall Meeting, 2011(
- Contribution to conference › Paper, not in proceeding
-
Mark
Inverter circuits based on vertical InAs nanowire MOSFETs
2011) Swedish System-on-Chip Conference, SSoCC 2011(
- Contribution to conference › Paper, not in proceeding
-
Mark
Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers
2011) 69th Device Research Conference, DRC 2011(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
-
Mark
Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging
(
- Contribution to journal › Article
-
Mark
InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
(
- Contribution to journal › Article
-
Mark
High Frequency Performance of Vertical InAs Nanowire MOSFET
2010) 22nd International Conference on Indium Phosphide and Related Materials(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
(
- Contribution to journal › Article
-
Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Vertical InAs nanowire wrap gate transistors for integration on a Si platform
2010) GigaHertz Symposium, 2010(
- Contribution to conference › Paper, not in proceeding
- 2009
-
Mark
MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.
(
- Contribution to journal › Article
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2008
-
Mark
InAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy
2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.042017-042017(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
GaAs/GaSb nanowire heterostructures grown by MOVPE
(
- Contribution to journal › Article
-
Mark
High-Quality InAs/InSb Nanowire Heterostructures Grown by Metal-Organic Vapor-Phase Epitaxy.
(
- Contribution to journal › Article
-
Mark
Characterization of GaSb nanowires grown by MOVPE
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding