1 – 98 of 98
- show: 250
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2024
-
Mark
III-V Devices for Emerging Electronic Applications
2024)(
- Thesis › Doctoral thesis (compilation)
- 2023
-
Mark
Vertical III-V Nanowire Transistors for Low-Power Electronics
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Infrared Photodetectors based on InSb and InAs Nanostructures via Heterogeneous Integration-Rapid Melt Growth and Template Assisted Selective Epitaxy
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
(
- Contribution to journal › Article
-
Mark
Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten
(
- Contribution to journal › Article
-
Mark
Adventures of III-V Semiconductor Surfaces
2023)(
- Thesis › Doctoral thesis (compilation)
- 2022
-
Mark
Atomic Hydrogen Annealing of Graphene on InAs Surfaces and Nanowires : Interface and Morphology Control for Optoelectronics and Quantum Technologies
(
- Contribution to journal › Article
-
Mark
Optical-Beam-Induced Current in InAs/InP Nanowires for Hot-Carrier Photovoltaics
(
- Contribution to journal › Article
- 2021
-
Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
(
- Contribution to journal › Article
-
Mark
Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
2021)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Kinetic and Thermodynamic Modeling of Nanowire Growth
2021)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
(
- Contribution to journal › Article
- 2020
-
Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
(
- Contribution to journal › Article
-
Mark
Theory of electronic structure and transport in heterostructure nanowires
2020)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
(
- Contribution to journal › Article
-
Mark
Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studies
(
- Contribution to journal › Article
- 2019
-
Mark
Dimension Engineering of High-Quality InAs Nanostructures on a Wafer Scale
(
- Contribution to journal › Article
-
Mark
Transition to the quantum hall regime in InAs nanowire cross-junctions
(
- Contribution to journal › Article
-
Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
(
- Contribution to journal › Article
-
Mark
Charge transport in III-V narrow bandgap semiconductor nanowires
2019)(
- Thesis › Doctoral thesis (compilation)
- 2018
-
Mark
Nanowire morphology and particle phase control by tuning the in concentration of the foreign metal nanoparticle
(
- Contribution to journal › Article
-
Mark
A Self-aligned Gate-last Process applied to All-III-V CMOS on Si
(
- Contribution to journal › Article
-
Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
(
- Contribution to journal › Article
- 2017
-
Mark
Conduction Band Offset and Polarization Effects in InAs Nanowire Polytype Junctions
(
- Contribution to journal › Article
-
Mark
Phase diagrams for understanding gold-seeded growth of GaAs and InAs nanowires
(
- Contribution to journal › Article
-
Mark
High-Mobility GaSb Nanostructures Cointegrated with InAs on Si
(
- Contribution to journal › Article
-
Mark
Electronic Structure Changes Due to Crystal Phase Switching at the Atomic Scale Limit
(
- Contribution to journal › Article
-
Mark
Parallel-Coupled Quantum Dots in InAs Nanowires
(
- Contribution to journal › Article
-
Mark
Properties of III-V nanowires : MOSFETs and TunnelFETs
2017) 2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 p.99-100(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical III-V Nanowire Tunnel Field-Effect Transistor
2017)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article
-
Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
2017) In Nano Letters(
- Contribution to journal › Letter
- 2016
-
Mark
Ballistic modeling of InAs nanowire transistors
(
- Contribution to journal › Article
-
Mark
Vertical III-V/High-k Nanowire MOS Capacitors and Transistors
2016) In Lund University Faculty of Medicine Doctoral Dissertation Series(
- Thesis › Doctoral thesis (monograph)
-
Mark
Electrical Characterization of III-V Nanostructure
2016)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
(
- Contribution to journal › Letter
-
Mark
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 1 : Experimental Devices
(
- Contribution to journal › Article
-
Mark
Electronic structures of [1 1 1]-oriented free-standing InAs and InP nanowires
(
- Contribution to journal › Article
-
Mark
3-D Integrated Track-and-Hold Circuit Using InAs Nanowire MOSFETs and Capacitors
(
- Contribution to journal › Article
-
Mark
Amplifier Design Using Vertical InAs Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
(
- Contribution to journal › Article
- 2015
-
Mark
Vertical InAs Nanowire Devices and RF Circuits
(
- Thesis › Doctoral thesis (compilation)
-
Mark
III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si
(
- Contribution to journal › Article
-
Mark
Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogen
(
- Contribution to journal › Article
-
Mark
InAs Nanowire Devices and Circuits
(
- Thesis › Doctoral thesis (compilation)
-
Mark
III-V nanowires for logics and beyond
(
- Contribution to journal › Article
- 2014
-
Mark
High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
-
Mark
InAs nanowire MOSFET differential active mixer on Si-substrate
(
- Contribution to journal › Article
-
Mark
Intrinsic Performance of InAs Nanowire Capacitors
(
- Contribution to journal › Article
-
Mark
Nanowire Transistors and RF Circuits for Low-Power Applications
2014)(
- Thesis › Doctoral thesis (compilation)
-
Mark
High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices
(
- Contribution to journal › Article
-
Mark
Straight and kinked InAs nanowire growth observed in situ by transmission electron microscopy
(
- Contribution to journal › Article
-
Mark
Vertical III-V nanowire device integration on Si(100)
(
- Contribution to journal › Article
- 2013
-
Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
-
Mark
A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
(
- Contribution to journal › Article
-
Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
(
- Contribution to journal › Article
-
Mark
1/f-noise in Vertical InAs Nanowire Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
(
- Contribution to journal › Article
-
Mark
Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s
(
- Contribution to journal › Article
-
Mark
Novel Processing and Electrical Characterization of Nanowires
2013)(
- Thesis › Doctoral thesis (compilation)
- 2012
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract
-
Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Highly controlled InAs nanowires on Si(111) wafers by MOVPE
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week 9(2).(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Performance Evaluation of III–V Nanowire Transistors
(
- Contribution to journal › Article
-
Mark
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
(
- Contribution to journal › Article
-
Mark
Drastically increased absorption in vertical semiconductor nanowire arrays: A non-absorbing dielectric shell makes the difference
(
- Contribution to journal › Article
-
Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
2012) GigaHertz Symposium 2012(
- Contribution to conference › Paper, not in proceeding
-
Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353(
- Contribution to journal › Article
- 2011
-
Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
(
- Contribution to journal › Article
-
Mark
Temperature and annealing effects on InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Design of RF Properties for Vertical Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
-
Mark
Surface structure and morphology of InAs(111)B with/without gold nanoparticles annealed under arsenic or atomic hydrogen flux
(
- Contribution to journal › Article
-
Mark
Low-frequency noise in vertical InAs nanowire FETs
(
- Contribution to journal › Article
-
Mark
Modelling and optimization of III/V transistors with matrices of nanowires
(
- Contribution to journal › Article
-
Mark
Electron Transport in Nanowire Quantum Devices
2010)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Electrical Characterization of Integrated InAs Nano-Structures
2010)(
- Thesis › Doctoral thesis (compilation)
- 2009
-
Mark
Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
(
- Contribution to journal › Article
- 2008
-
Mark
Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
(
- Contribution to journal › Article
-
Mark
Development of a Vertical Wrap-Gated InAs FET
(
- Contribution to journal › Article
-
Mark
Evidence of stacking-fault distribution along an InAs nanowire using micro-focused coherent X-ray diffraction
(
- Contribution to journal › Article
-
Mark
Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
(
- Contribution to journal › Article
-
Mark
Growth, Physics, and Device Applications of InAs-based Nanowires
2008)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Optical Spectroscopy of Single Nanowires
2008)(
- Thesis › Doctoral thesis (compilation)
- 2007
-
Mark
Nanowire field-effect transistor
(
- Contribution to journal › Article
- 2006
-
Mark
Vertical high-mobility wrap-gated InAs nanowire transistor
(
- Contribution to journal › Article
- 2005
-
Mark
Epitaxial growth of semiconductor nanowires
2005)(
- Thesis › Doctoral thesis (compilation)
-
Mark
InAs epitaxial lateral overgrowth of W masks
(
- Contribution to journal › Article
-
Mark
Vertical high mobility wrap-gated InAs nanowire transistor
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Wrap-gated InAs nanowire field-effect transistor
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2003
-
Mark
One dimensional heterostructures and resonant tunneling in III-V nanowires
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Direct observation of structural relaxation in amorphous compound semiconductors
2003) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 206. p.1024-1027(
- Contribution to journal › Article
-
Mark
Epitaxial Growth, Processing and Characterization of Semiconductor Nanostructures
2003)(
- Thesis › Doctoral thesis (compilation)
- 2002
-
Mark
Structural characterization of amorphised InAs with synchrotron radiation
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Comparision between (111)B and (100) III-V nanowhiskers
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Optical characterisation of InAs quantum dots grown on {110} cleaved GaAs facets
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 1996
-
Mark
RHEED and RD studies of III-V semiconductors
1996)(
- Thesis › Doctoral thesis (compilation)