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- 2024
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Mark
Perfect Zeeman Anisotropy in Rotationally Symmetric Quantum Dots with Strong Spin-Orbit Interaction
(
- Contribution to journal › Article
-
Mark
Strong coupling between a microwave photon and a singlet-triplet qubit
(
- Contribution to journal › Article
- 2023
-
Mark
Large-bias spectroscopy of Yu-Shiba-Rusinov states in a double quantum dot
(
- Contribution to journal › Article
-
Mark
Energetics of Microwaves Probed by Double Quantum Dot Absorption
(
- Contribution to journal › Article
-
Mark
Quantum dot source-drain transport response at microwave frequencies
(
- Contribution to journal › Article
-
Mark
Josephson Junction π-0 Transition Induced by Orbital Hybridization in a Double Quantum Dot
(
- Contribution to journal › Article
-
Mark
Intermediate states in Andreev bound state fusion
(
- Contribution to journal › Article
- 2022
-
Mark
Experimental Verification of the Work Fluctuation-Dissipation Relation for Information-to-Work Conversion
(
- Contribution to journal › Article
-
Mark
Josephson current via spin and orbital states of a tunable double quantum dot
(
- Contribution to journal › Article
- 2021
-
Mark
Heat Driven Transport in Serial Double Quantum Dot Devices
(
- Contribution to journal › Article
-
Mark
Gate control, g factors, and spin-orbit energy of p -type GaSb nanowire quantum dot devices
(
- Contribution to journal › Article
-
Mark
Efficient and continuous microwave photoconversion in hybrid cavity-semiconductor nanowire double quantum dot diodes
(
- Contribution to journal › Article
-
Mark
Effects of Parity and Symmetry on the Aharonov-Bohm Phase of a Quantum Ring
2021) In Nano Letters(
- Contribution to journal › Article
-
Mark
Symmetry-controlled singlet-triplet transition in a double-barrier quantum ring
(
- Contribution to journal › Article
- 2020
-
Mark
Ambipolar transport in narrow bandgap semiconductor InSb nanowires
(
- Contribution to journal › Article
-
Mark
Selective tuning of spin-orbital Kondo contributions in parallel-coupled quantum dots
(
- Contribution to journal › Article
-
Mark
Hot-Carrier Extraction in Nanowire-Nanoantenna Photovoltaic Devices
(
- Contribution to journal › Article
-
Mark
Magnetic-Field-Independent Subgap States in Hybrid Rashba Nanowires
(
- Contribution to journal › Article
-
Mark
Imaging the Thermalization of Hot Carriers after Thermionic Emission over a Polytype Barrier
(
- Contribution to journal › Article
- 2019
-
Mark
Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
(
- Contribution to journal › Article
-
Mark
Core-shell tfet developments and tfet limitations
2019) 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Spectroscopy of the superconducting proximity effect in nanowires using integrated quantum dots
(
- Contribution to journal › Article
-
Mark
Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers
(
- Contribution to journal › Article
-
Mark
Electrical control of spins and giant g-factors in ring-like coupled quantum dots
(
- Contribution to journal › Article
- 2018
-
Mark
Realization of Wurtzite GaSb Using InAs Nanowire Templates
(
- Contribution to journal › Article
-
Mark
Thermoelectric Power Factor Limit of a 1D Nanowire
(
- Contribution to journal › Article
-
Mark
Nanoscale Scanning Probe Thermometry
2018) 24th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2018(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Tuning the Two-Electron Hybridization and Spin States in Parallel-Coupled InAs Quantum Dots
(
- Contribution to journal › Article
-
Mark
Thermoelectric Characterization of the Kondo Resonance in Nanowire Quantum Dots
(
- Contribution to journal › Article
-
Mark
Spectroscopy and level detuning of few-electron spin states in parallel InAs quantum dots
(
- Contribution to journal › Article
-
Mark
A quantum-dot heat engine operating close to the thermodynamic efficiency limits
(
- Contribution to journal › Article
- 2017
-
Mark
Conduction Band Offset and Polarization Effects in InAs Nanowire Polytype Junctions
(
- Contribution to journal › Article
-
Mark
Radial tunnel diodes based on InP/InGaAs core-shell nanowires
(
- Contribution to journal › Article
-
Mark
Parallel-Coupled Quantum Dots in InAs Nanowires
(
- Contribution to journal › Article
-
Mark
Bipolar Photothermoelectric Effect Across Energy Filters in Single Nanowires
(
- Contribution to journal › Article
-
Mark
Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage
(
- Contribution to journal › Article
-
Mark
Imaging Atomic Scale Dynamics on III-V Nanowire Surfaces during Electrical Operation
(
- Contribution to journal › Article
- 2016
-
Mark
Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates
(
- Contribution to journal › Article
-
Mark
InAs nanowire GAA n-MOSFETs with 12-15 nm diameter
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering
(
- Contribution to journal › Article
- 2015
-
Mark
Selective GaSb radial growth on crystal phase engineered InAs nanowires.
(
- Contribution to journal › Article
-
Mark
Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots
(
- Contribution to journal › Article
-
Mark
Sn-Seeded GaAs Nanowires as Self-Assembled Radial p-n Junctions
(
- Contribution to journal › Article
-
Mark
Characterization of Ambipolar GaSb/InAs Core-Shell Nanowires by Thermovoltage Measurements.
(
- Contribution to journal › Article
-
Mark
Scanning Tunneling Spectroscopy on InAs-GaSb Esaki Diode Nanowire Devices during Operation.
(
- Contribution to journal › Article
- 2014
-
Mark
InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications
(
- Contribution to journal › Published meeting abstract
-
Mark
Electrical properties of GaSb/InAsSb core/shell nanowires
(
- Contribution to journal › Article
-
Mark
Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments
(
- Contribution to journal › Article
-
Mark
High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices
(
- Contribution to journal › Article
-
Mark
Fully tunable, non-invasive thermal biasing of gated nanostructures suitable for low-temperature studies.
(
- Contribution to journal › Article
-
Mark
Growth of InAs/GaSb core shell nanowires with various fully controlled crystal structures along the core
2014) 17th International Conference on Metalorganic Vapor Phase Epitaxy, 2014(
- Contribution to conference › Abstract
-
Mark
Observation of Type II Recombination in Single Wurtzite-Zincblende GaAs Heterojunction Nanowire
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
-
Mark
Bridging Electronic Barriers in InAs-Nanowires with Oligo(phenylene vinylene) Molecular Wires
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
-
Mark
Electron-Hole Transport in Core-Shell InAs-GaSb Nanowires
2014) 32nd International Conference on the Physics of Semiconductors(
- Contribution to conference › Abstract
- 2013
-
Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
Control and understanding of kink formation in InAs-InP heterostructure nanowires.
(
- Contribution to journal › Article
-
Mark
Large Thermoelectric Power Factor Enhancement Observed in InAs Nanowires.
(
- Contribution to journal › Article
-
Mark
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
(
- Contribution to journal › Article
-
Mark
Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s
(
- Contribution to journal › Article
- 2012
-
Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High-Performance InAs Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires
(
- Contribution to journal › Article
-
Mark
Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.
(
- Contribution to journal › Article
-
Mark
Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy
(
- Contribution to journal › Article
-
Mark
Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
(
- Contribution to journal › Article
-
Mark
Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires.
(
- Contribution to journal › Article
-
Mark
Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
-
Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
2012) GigaHertz Symposium 2012(
- Contribution to conference › Paper, not in proceeding
-
Mark
InAs Nanowires for High Frequency Electronics
2012) GigaHertz Symposium 2012(
- Contribution to conference › Abstract
-
Mark
Nonlinear Thermopower in Quantum Dots
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
2012) ICPS 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
(
- Contribution to journal › Article
-
Mark
Effects of crystal phase mixing on the electrical properties of InAs nanowires
(
- Contribution to journal › Article
-
Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article
-
Mark
Gate-Induced Fermi Level Tuning in InP Nanowires at Efficiency Close to the Thermal Limit.
(
- Contribution to journal › Article
-
Mark
Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
(
- Contribution to journal › Article
-
Mark
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
(
- Contribution to journal › Article
-
Mark
GaSb nanowire single-hole transistor
(
- Contribution to journal › Article
-
Mark
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
(
- Contribution to journal › Article
-
Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
(
- Contribution to journal › Article
-
Mark
Dual-gate induced InP nanowire diode
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(
- Contribution to journal › Article
-
Mark
15 nm diameter InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Inverter circuits based on vertical InAs nanowire MOSFETs
2011) Swedish System-on-Chip Conference, SSoCC 2011(
- Contribution to conference › Paper, not in proceeding
-
Mark
Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
-
Mark
InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
(
- Contribution to journal › Article
-
Mark
High Frequency Performance of Vertical InAs Nanowire MOSFET
2010) 22nd International Conference on Indium Phosphide and Related Materials(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
(
- Contribution to journal › Article
-
Mark
Low-frequency noise in vertical InAs nanowire FETs
(
- Contribution to journal › Article
-
Mark
The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.
(
- Contribution to journal › Article
-
Mark
Time-resolved photoluminescence investigations on HfO2-capped InP nanowires
(
- Contribution to journal › Article
-
Mark
III-V Nanowires-Extending a Narrowing Road
(
- Contribution to journal › Article
-
Mark
Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
(
- Contribution to journal › Letter
-
Mark
Temperature dependent properties of InSb and InAs nanowire field-effect transistors
(
- Contribution to journal › Article
-
Mark
Approaches to doctoral supervision in relation to student expectations : Project report for the Docent course at LTH, Lund, Sweden, October 2010
2010)(
- Book/Report › Report
-
Mark
A study of supervision approaches : The needs of doctoral supervision from a student perspective
(
- Contribution to specialist publication or newspaper › Specialist publication article
-
Mark
Vertical dual wrapgated-induced field effect diode
2010) 30th International Conference on the Physics of Semiconductors, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Vertical InAs nanowire wrap gate transistors for integration on a Si platform
2010) GigaHertz Symposium, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Crystal Phase Engineering in Single InAs Nanowires.
(
- Contribution to journal › Article
- 2009
-
Mark
Giant, level-dependent g factors in InSb nanowire quantum dots.
(
- Contribution to journal › Article
-
Mark
Deposition of HfO2 on InAs by atomic-layer deposition
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Fabrication Tehnology for RF Cirquit Implementation of Vertical III-V MOSFETs
2009) Swedish System-on-Chip Conference, SSoCC '09(
- Contribution to conference › Abstract
- 2008
-
Mark
Drive current and threshold voltage control in vertical InAs wrap-gate transistors
(
- Contribution to journal › Article
-
Mark
Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
(
- Contribution to journal › Article
-
Mark
A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire.
(
- Contribution to journal › Article
-
Mark
Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
(
- Contribution to journal › Article
-
Mark
Heterostructure Barriers in Wrap Gated Nanowire FETs
(
- Contribution to journal › Article
- 2007
-
Mark
Sulfur passivation for ohmic contact formation to InAs nanowires
(
- Contribution to journal › Article
-
Mark
Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings
(
- Contribution to journal › Article
- 2006
-
Mark
Nanowire-based multiple quantum dot memory
(
- Contribution to journal › Article
-
Mark
Nanowire-based one-dimensional electronics
(
- Contribution to journal › Article
-
Mark
A nanowire-based multiple quantum dot memory
2006) Semiconductor Nanowires Symposium, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs nanowire wrap-gate FETs
2006) Semiconductor Nanowires Symposium, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2005
-
Mark
Nanowire single-electron memory
(
- Contribution to journal › Article
-
Mark
Semiconductor nanowires
2005) Intl Conf Nanotech Forum, 2005(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Single-electron memories based on nanowires
2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Epitaxielle Kristallnadeln und -bäume
2005) DGKK-Jahrestagung, Köln, Germany (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Device properties of InAs/InP nanowire heterostructures
2005) E-MRS Spring Meet, Strasbourg, France (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Transport studies on nanowire quantum dots
2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Transport in heterostructure nanowires
2005) New Year IOP Nanodevices Workshop, Daresbury, UK (2005), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Sulfur passivation for formation of Ohmic contacts to InAs nanowire devices
2005) 31st Intl Conf Micro- and Nano-Engineering, 2005(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
One-dimensional epitaxial compound semiconductor structures
2005) 10th Intl Symp on Advanced Physical Fields: Fabrication of Nanostr, Tsukuba, Japan (2005), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electrical contacts technology for single nanowires and molecules
2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Spin relaxation in InAs nanowires studied by tunable weak antilocalization
(
- Contribution to journal › Article
- 2004
-
Mark
Electrical properties of InAs-based nanowires
2004) Electronic Properties of Synthetic Nanostructures. XVIII International Winterschool/Euroconference on Electronic Properties of Novel Materials 723. p.449-452(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electron transport in InAs nanowires and heterostructure nanowire devices
(
- Contribution to journal › Article
-
Mark
Semiconductor nanowires for 0D and 1D physics and applications
(
- Contribution to journal › Article
-
Mark
Semiconductor nanowires for novel one-dimensional devices
(
- Contribution to journal › Article
-
Mark
Few-electron quantum dots in nanowires
(
- Contribution to journal › Article
-
Mark
Transport via quantum dots in one-dimensional nanowires
2004) Intl Symp Quantum Dot, Banff, Canada (2004)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Future device and circuit opportunities based on nanowires
2004) NSF/SSF Workshop on Nanoscience and Nanotechnology, 2004(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2003
-
Mark
One dimensional heterostructures and resonant tunneling in III-V nanowires
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Quantum Devices from the Assembly of Zero- and One-Dimensional Building Blocks
2003)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Heterostructures incorporated in one-dimensional semiconductor materials and devices
(
- Chapter in Book/Report/Conference proceeding › Book chapter
-
Mark
Single-electron transistors in heterostructure nanowires.
(
- Contribution to journal › Article
- 2002
-
Mark
AFM manipulation of carbon nanotubes: realization of ultra-fine nanoelectrodes
(
- Contribution to journal › Article
-
Mark
Direct observation of the molten state of nanometer-sized particles with an atomic force microscope: A feasibility study
(
- Contribution to journal › Article
-
Mark
One-dimensional heterostructures in semiconductor nanowhiskers
(
- Contribution to journal › Article
-
Mark
Nanowire resonant tunneling diodes
(
- Contribution to journal › Article
-
Mark
One-dimensional steeplechase for electrons realized
(
- Contribution to journal › Article
-
Mark
Heterointerfaces in III-V semiconductor nanowhiskers
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Unimodal dome-shaped island population of Ge/Si (001) by step-wise growth in UHV-CVD
(
- Contribution to journal › Article
-
Mark
Observation of the molten state of nano-particles with an atomic force microscope
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Fabrication and modeling of a combined gold nanoparticle-carbon nanotube single electron transistor
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures
2002) Tenth International Conference on Modulated Semiconductor Structures. MSS 10 13(2-4). p.1126-1130(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2001
-
Mark
Gold nanoparticle single electron transistor with carbon nanotube leads
(
- Contribution to journal › Article
- 2000
-
Mark
Evaluation of intermittent contact mode AFM probes by HREM and using atomically sharp CeO2 ridges as tip characterizer
(
- Contribution to journal › Article