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- 2024
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Mark
Anomalous negative magnetoresistance in quantum dot Josephson junctions with Kondo correlations
(
- Contribution to journal › Article
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Mark
2D electron gas formation on InAs wurtzite nanosheet surfaces
(
- Contribution to journal › Article
- 2023
-
Mark
Tuneable 2D surface Bismuth incorporation on InAs nanosheets
(
- Contribution to journal › Article
- 2022
-
Mark
Quasiparticle Trapping at Vortices Producing Josephson Supercurrent Enhancement
(
- Contribution to journal › Article
- 2021
-
Mark
Probing strain in wurtzite InP-InAs core-shell nanowires with Raman spectroscopy
(
- Contribution to journal › Article
- 2020
-
Mark
Ambipolar transport in narrow bandgap semiconductor InSb nanowires
(
- Contribution to journal › Article
- 2019
-
Mark
Coulomb blockade from the shell of an InP-InAs core-shell nanowire with a triangular cross section
(
- Contribution to journal › Article
-
Mark
Two-Dimensional Quantum Transport in Free-Standing InSb Nanosheets
(
- Contribution to journal › Article
-
Mark
Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires
(
- Contribution to journal › Article
-
Mark
Dimension Engineering of High-Quality InAs Nanostructures on a Wafer Scale
(
- Contribution to journal › Article
-
Mark
Gate defined quantum dot realized in a single crystalline InSb nanosheet
(
- Contribution to journal › Article
-
Mark
A Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate
(
- Contribution to journal › Article
-
Mark
Magnetotransport properties of graphene layers decorated with colloid quantum dots
(
- Contribution to journal › Article
-
Mark
Mott variable-range hopping transport in a MoS2 nanoflake
(
- Contribution to journal › Article
-
Mark
Universal conductance fluctuations and phase-coherent transport in a semiconductor Bi2O2Se nanoplate with strong spin-orbit interaction
(
- Contribution to journal › Article
- 2018
-
Mark
Cooper-pair splitting in two parallel InAs nanowires
(
- Contribution to journal › Article
-
Mark
Anomalous modulation of Josephson radiation in nanowire-based Josephson junctions
(
- Contribution to journal › Article
-
Mark
Tunable Low Loss 1D Surface Plasmons in InAs Nanowires
(
- Contribution to journal › Article
-
Mark
Low-field magnetotransport in graphene cavity devices
(
- Contribution to journal › Article
-
Mark
Strong spin-orbit interaction and magnetotransport in semiconductor Bi2O2Se nanoplates
(
- Contribution to journal › Article
-
Mark
Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures
(
- Contribution to journal › Article
-
Mark
Anisotropic Pauli Spin-Blockade Effect and Spin-Orbit Interaction Field in an InAs Nanowire Double Quantum Dot
(
- Contribution to journal › Article
- 2017
-
Mark
Electron-Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene
(
- Contribution to journal › Article
-
Mark
Majorana fermions in topological-insulator nanowires : From single superconducting nanowires to Josephson junctions
(
- Contribution to journal › Article
-
Mark
Extracting band structure characteristics of GaSb/InAs core-shell nanowires from thermoelectric properties
(
- Contribution to journal › Article
-
Mark
0-π phase transition in hybrid superconductor-InSb nanowire quantum dot devices
(
- Contribution to journal › Article
-
Mark
Synthesis of Mn-doped indium antimonide nanowires by multi-step depositions and annealing
(
- Contribution to journal › Article
-
Mark
Coherent Transport in a Linear Triple Quantum Dot Made from a Pure-Phase InAs Nanowire
(
- Contribution to journal › Article
-
Mark
Growth of InAs NWs with controlled morphology by CVD
(
- Contribution to journal › Article
-
Mark
Gate tunable parallel double quantum dots in InAs double-nanowire devices
(
- Contribution to journal › Article
- 2016
-
Mark
Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film.
(
- Contribution to journal › Article
-
Mark
Electronic structures of [1 1 1]-oriented free-standing InAs and InP nanowires
(
- Contribution to journal › Article
-
Mark
Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions
(
- Contribution to journal › Article
-
Mark
Probe of local impurity states by bend resistance measurements in graphene cross junctions
(
- Contribution to journal › Article
-
Mark
Generic technique to grow III-V semiconductor nanowires in a closed glass vessel
(
- Contribution to journal › Article
-
Mark
k.p theory of freestanding narrow band gap semiconductor nanowires
(
- Contribution to journal › Article
-
Mark
Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide
(
- Contribution to journal › Article
-
Mark
InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition
(
- Contribution to journal › Article
-
Mark
Schottky barrier and contact resistance of InSb nanowire field-effect transistors
(
- Contribution to journal › Article
-
Mark
Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime
(
- Contribution to journal › Article
-
Mark
Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires
(
- Contribution to journal › Article
-
Mark
Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process
(
- Contribution to journal › Article
-
Mark
Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts
(
- Contribution to journal › Article
- 2015
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Mark
Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors.
(
- Contribution to journal › Article
-
Mark
Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots
(
- Contribution to journal › Article
-
Mark
Growth of In As nanowires with the morphology and crystal structure controlled by carrier gas flow rate
(
- Contribution to journal › Article
-
Mark
Phase-coherent transport and spin relaxation in InAs nanowires grown by molecule beam epitaxy
(
- Contribution to journal › Article
-
Mark
Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy
(
- Contribution to journal › Article
-
Mark
Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires
(
- Contribution to journal › Article
- 2014
-
Mark
Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device.
(
- Contribution to journal › Article
-
Mark
Tunnel spectroscopy of Majorana bound states in topological superconductor/quantum dot Josephson junctions
(
- Contribution to journal › Article
-
Mark
Room-Temperature Near-Infrared Photodetectors Based on Single Heterojunction Nanowires
(
- Contribution to journal › Article
-
Mark
Charge transport in InAs nanowire Josephson junctions
(
- Contribution to journal › Article
-
Mark
Suspended InAsnanowire gate-all-around field-effect transistors
(
- Contribution to journal › Article
-
Mark
Gate tunable nonlinear rectification effects in three-terminal graphene nanojunctions
(
- Contribution to journal › Article
-
Mark
Quantum description of transport phenomena: Recent progress
(
- Contribution to journal › Debate/Note/Editorial
- 2013
-
Mark
Tunable zero-field Kondo splitting in a quantum dot
(
- Contribution to journal › Article
-
Mark
Efficient light management in vertical nanowire arrays for photovoltaics
(
- Contribution to journal › Article
-
Mark
Quantized Conductance and Its Correlation to the Supercurrent in a Nanowire Connected to Superconductors
(
- Contribution to journal › Article
-
Mark
Synthesis, properties, and top-gated metal-oxide-semiconductor field-effect transistors of p-type GaSb nanowires
(
- Contribution to journal › Article
-
Mark
Superconductor-nanowire devices from tunneling to the multichannel regime: Zero-bias oscillations and magnetoconductance crossover
(
- Contribution to journal › Article
-
Mark
Nonlinear thermovoltage and thermocurrent in quantum dots
(
- Contribution to journal › Article
-
Mark
Photoelectrical response of hybrid graphene-PbS quantum dot devices
(
- Contribution to journal › Article
-
Mark
Optical Far-Field Method with Subwavelength Accuracy for the Determination of Nanostructure Dimensions in Large-Area Samples.
(
- Contribution to journal › Article
-
Mark
Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates
(
- Contribution to journal › Article
-
Mark
InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit.
(
- Contribution to journal › Article
-
Mark
Coupling a quantum dot in an InSb nanowire to a superconducting resonator
2013) Lund-Tokyo-Copenhagen-Beijing Joint Workhop on Quantum Devices(
- Contribution to conference › Abstract
-
Mark
a.c. Josephson effect in Niobium/InSb nanowire junctions
2013) Lund-Tokyo-Copenhagen-Beijing Joint Workhop on Quantum Devices(
- Contribution to conference › Abstract
-
Mark
Si and Ge nanowire based quantum dots for spin qubits
2013) Lund-Tokyo-Copenhagen-Beijing Joint Workhop on Quantum Devices(
- Contribution to conference › Abstract
-
Mark
Zero-bias conductance peaks in Superconductor-Semiconductor Hybrid Quantum Devices: with and without Majorana fermions
2013) Lund-Tokyo-Copenhagen-Beijing Joint Workhop on Quantum Devices(
- Contribution to conference › Abstract
-
Mark
Signatures of Majorna Fermions in hybrid Superconductor-Semiconductor-Superconductor Josephson nanowire devices
2013) Lund-Tokyo-Copenhagen-Beijing Joint Workhop on Quantum Devices(
- Contribution to conference › Abstract
-
Mark
Josephson current through an InSb nanowire with a strong spin-orbit interaction
2013) Lund-Tokyo-Copenhagen-Beijing Joint Workhop on Quantum Devices(
- Contribution to conference › Abstract
- 2012
-
Mark
Colorful InAs Nanowire Arrays: From Strong to Weak Absorption with Geometrical Tuning.
(
- Contribution to journal › Article
-
Mark
Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device.
(
- Contribution to journal › Article
-
Mark
Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junction
(
- Contribution to journal › Article
-
Mark
High Critical-Current Superconductor-InAs Nanowire-Superconductor Junctions
(
- Contribution to journal › Article
-
Mark
Lineshape of the thermopower of quantum dots
(
- Contribution to journal › Article
-
Mark
Excitations of surface plasmon polaritons in double layer metal grating structures
(
- Contribution to journal › Article
-
Mark
Drastically increased absorption in vertical semiconductor nanowire arrays: A non-absorbing dielectric shell makes the difference
(
- Contribution to journal › Article
-
Mark
Elastic and Piezoelectric Properties of Zincblende and Wurtzite Crystalline Nanowire Heterostructures.
(
- Contribution to journal › Article
-
Mark
Observation of the signatures of Majorana fermions in superconductor-semiconductor nanowire-superconductor quantum devices
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Observation of the superconductivity in a Nb-InSb nanowire-Nb hybrid quantum device
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Absorption of light in an InP nanowire array
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Supercurrent and multiple Andreev reflections in InSb nanowire quantum dot devices with Al contacts
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Colorful InAs Nanowire Arrays: From Strong to Weak Absorption With Geometrical Tuning
2012) ICPS 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode
(
- Contribution to journal › Article
-
Mark
Charge state readout and hyperfine interaction in a few-electron InGaAs double quantum dot
(
- Contribution to journal › Article
-
Mark
InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
(
- Contribution to journal › Article
-
Mark
Scattering matrix method for optical excitation of surface plasmons in metal films with periodic arrays of subwavelength holes
(
- Contribution to journal › Article
-
Mark
Signatures of Wigner localization in epitaxially grown nanowires
(
- Contribution to journal › Article
-
Mark
GaSb nanowire single-hole transistor
(
- Contribution to journal › Article
-
Mark
Gate-Defined Quantum Devices Realized in InGaAs/InP by Incorporating a High-kappa Layer as Gate Dielectric
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Efficient methods of nanoimprint stamp cleaning based on imprint self-cleaning effect.
(
- Contribution to journal › Article
-
Mark
Valley-Dependent Brewster Angles and Goos-Hanchen Effect in Strained Graphene
(
- Contribution to journal › Article
-
Mark
Photovoltaics with piezoelectric core-shell nanowires
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Fabrication and characterization of bilayer metal wire-grid polarizer using nanoimprint lithography on flexible plastic substrate
(
- Contribution to journal › Article
-
Mark
Supercurrent through InAs nanowires with highly transparent superconducting contacts
(
- Contribution to journal › Article
-
Mark
Piezoelectric photovoltaics with nanowire arrays
2011) ICON, 2011(
- Contribution to conference › Paper, not in proceeding
- 2010
-
Mark
Photovoltaics with Piezoelectric Core-Shell Nanowires
(
- Contribution to journal › Article
-
Mark
Field-orientation dependence of the Zeeman spin splitting in (In,Ga)As quantum point contacts
(
- Contribution to journal › Article
-
Mark
Thermoelectric efficiency at maximum power in low-dimensional systems
(
- Contribution to journal › Article
-
Mark
Surface-enhanced Raman scattering on dual-layer metallic grating structures
(
- Contribution to journal › Article
-
Mark
Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy.
(
- Contribution to journal › Article
-
Mark
Coupling of Light into Nanowire Arrays and Subsequent Absorption
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-kappa dielectric
(
- Contribution to journal › Article
-
Mark
Correlation-induced conductance suppression at level degeneracy in a quantum dot.
(
- Contribution to journal › Article
-
Mark
Nonlinear electrical properties of Si three-terminal junction devices
(
- Contribution to journal › Article
- 2009
-
Mark
Giant, level-dependent g factors in InSb nanowire quantum dots.
(
- Contribution to journal › Article
-
Mark
Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
(
- Contribution to journal › Article
-
Mark
Strain distributions in lattice-mismatched semiconductor core-shell nanowires
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Strain in semiconductor core-shell nanowires
(
- Contribution to journal › Article
-
Mark
g-factor and exchange energy in a few-electron lateral InGaAs quantum dot
(
- Contribution to journal › Article
-
Mark
Rectification of spin-bias-induced charge currents
(
- Contribution to journal › Article
-
Mark
Field-driven geometrical phases in a time-periodic quantum system
(
- Contribution to journal › Article
-
Mark
Photoemission electron microscopy using extreme ultraviolet attosecond pulse trains
(
- Contribution to journal › Article
-
Mark
Spin-3/2 physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splittings
(
- Contribution to journal › Article
-
Mark
Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2008
-
Mark
Light scattering and plasmon resonances in a metal film with sub-wavelength nano-holes
2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.052037-052037(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Tip-enhanced Raman scattering of p-thiocresol molecules on individual gold nanoparticles
(
- Contribution to journal › Article
-
Mark
Electron transport study of a lateral InGaAs quantum dot
(
- Contribution to journal › Article
-
Mark
Novel room-temperature functional analogue and digital nanoelectronic circuits based on three-terminal ballistic junctions and planar quantum-wire transistors
2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.052073-052073(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A highly tunable lateral quantum dot realized in InGaAs/InP by an etching technique
(
- Contribution to journal › Article
-
Mark
Surface-enhanced Raman scattering of rhodamine 6G on nanowire arrays decorated with gold nanoparticles
(
- Contribution to journal › Article
-
Mark
Spin States of holes in ge/si nanowire quantum dots.
(
- Contribution to journal › Article
-
Mark
Spin current diode based on an electron waveguide with spin-orbit interaction
(
- Contribution to journal › Article
-
Mark
A sequential logic device realized by integration of in-plane gate transistors in InGaAs/InP
(
- Contribution to journal › Article
-
Mark
AC Conductance of DNA molecule at low temperature
2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.052065-052065(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Lande-like formula for the g factors of hole-nanowire subband edges
(
- Contribution to journal › Article
-
Mark
A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP
(
- Contribution to journal › Article
-
Mark
Electrical properties of self-assembled branched InAs nanowire junctions
(
- Contribution to journal › Article
- 2007
-
Mark
Novel nanoelectronic device applications based on the nonlinearity of three-terminal ballistic junctions
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Frequency mixing and phase detection functionalities of three-terminal ballistic junctions
(
- Contribution to journal › Article
-
Mark
Spin filtering and spin accumulation in an electron stub waveguide with spin-orbit interaction
(
- Contribution to journal › Article
-
Mark
Spin transport and spin Hall effect in an electron waveguide in the presence of an in-plane magnetic field and spin-orbit interaction
(
- Contribution to journal › Article
-
Mark
Electric control of spin polarization orientation in a magnetic-electric barrier structure
(
- Contribution to journal › Article
-
Mark
Spin transport and spin Hall effect in J=3/2 semiconductor systems
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Spin physics and spintronic devices with semiconductor heterostructures: symmetry, spin Hall effect and Zitterbewegung
2007) 8th Sweden-Japan Intl Workshop on Quantum Nanoelectronics, 2007(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Quantum point contacts as spin injectors and detectors for studying Rasha spin precession in semiconductor quantum wires
2007)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Detection of charge states in nanowire quantum dots using a quantum point contact
(
- Contribution to journal › Article
- 2006
-
Mark
Spin filtering in single magnetic barrier structures revisited
(
- Contribution to journal › Article
-
Mark
Nanoimprint lithography for the fabrication of interdigitated cantilever arrays
(
- Contribution to journal › Article
-
Mark
Spin Hall effect and zitterbewegung in an electron waveguide
(
- Contribution to journal › Article
-
Mark
Scattering matrix method for multimode electron transport through quantum wires under a local magnetic field modulation and spin-orbit interaction
(
- Contribution to journal › Article
-
Mark
Coherent electron flow from a double slit with slit widths in the quantum conductance regime
(
- Contribution to journal › Article
-
Mark
Spin filtering devices based on ferromagnetic stripe modulated double quantum-dot structures
(
- Contribution to journal › Article
-
Mark
Symmetry of hole spin transport in a two-terminal quantum system
(
- Contribution to journal › Article
-
Mark
An electrically tunable interdigitated cantilever array fabricated by nanoimprint lithography
2006) Intl Conf on Nanoimprint and Nanoprint Technology, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Novel nanoelectronic device applications based on the non-linearity of three-terminal ballistic junctions
2006) 28th International Conference On The Physics Of Semiconductors, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Surface-enhanced Raman scattering of rhodamine 6G on gold nanoparticles deposited 3-dimensionally on nanowire arrays
2006) Intl Workshop on Plasmonics and Appl in Nanotechn, Singapore (2006)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Emerging nanodevices made with branched nanostructures
2006) MRS Fall Meet, Boston, Ma, USA (2006), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Fabrication and electron transport study of three-terminal InAs nanowire junctions
2006) 14th Intl Symp “Nanostructures: Physics and Technology”, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Towards the realization of a charge detector for nanowire quantum dots
2006) 28th International Conference On The Physics Of Semiconductors, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Nanoimprint and reactive etching for fabrication of Si/SiO2 NEMS structures
2006) 14th Intl Symp “Nanostructures: Physics and Technology”, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electrical properties of three-terminal InAs nanowire junctions
2006) ICPS 2006, Vienna, Austria, July 24-28 2006 1(
- Contribution to conference › Paper, not in proceeding
-
Mark
Electronic structure of free-standing GaAs/AlGaAs nanowire superlattices
(
- Contribution to journal › Article
-
Mark
Ballistic behavior of electrons in semiconductor multi-terminal junctions at room temperature
2006) 28th International Conference On The Physics Of Semiconductors, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electronic structure of [100]-oriented free-standing InAs and InP nanowires with square and rectangular cross sections
(
- Contribution to journal › Article
-
Mark
Nanoimprint-based fabrication and characterization of interdigitated cantilevver array
2006) International Conference on Nanoscience and Technology, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Nonlinear electrical properties of three-terminal junctions
(
- Contribution to journal › Article
- 2005
-
Mark
Symmetry of spin transport in two-terminal waveguides with a spin-orbital interaction and magnetic field modulations
(
- Contribution to journal › Article
-
Mark
Electrical properties and logic function of multibranch junction structures
(
- Contribution to journal › Article
-
Mark
Nanotubes: The logical choice for electronics?
(
- Contribution to journal › Debate/Note/Editorial
-
Mark
Multimode electron transport through quantum waveguides with spin-orbit interaction modulation: Applications of the scattering matrix formalism
(
- Contribution to journal › Article
-
Mark
Three-terminal ballistic junctions: New building blocks for functional devices in nanoelectronics
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Microwave detection at 110 GHz by nanowires with broken symmetry
(
- Contribution to journal › Article
-
Mark
Prospective applications of branched nanowire structures
2005) 1st International Symposium on Semiconductor Nanowires, 2005(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Nanoimprint technology for fabrication of tunable grating structures
2005) 31st Intl Conf Micro- and Nano-Engineering, 2005(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Multi-mode electron transport through quantum waveguides with spin-orbit interaction modulations
2005) 3rd Intl School and Conf on Semicond Spintronics and Quantum INf Technol, Awaji, Japan (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Multi-mode electron transport through quantum waveguides with spin-orbit interaction modulations
2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Multi-mode electron transport through quantum waveguide with spin-orbit interaction modulations: Applications of the scattering matrix formalism
(
- Contribution to journal › Article
-
Mark
Electronic structure and giant polarization anisotropy in optical transition of free-standing semiconductor nanowires
2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Generation of spin polarization in two-terminal electron waveguides by spin-orbit interaction and magnetic field modulations
(
- Contribution to journal › Article
-
Mark
Transport through single-channel atomic wires: Effects of connected sites on scattering phase and odd-even parity oscillations
(
- Contribution to journal › Article
-
Mark
Room-temperature nanoelectronic logic devices with ballistic junctions
2005) China Intl Conf on Nanosci and Technol, Beijing, China (2005), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electronic structure and giant polarization anisotropy in optical transition of free-standing semiconductor nanowires
2005) China Intl Conf on Nanosci and Technol, Beijing, China (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electrical functionality of ballistic nanojunctions made from semiconductor heterostructures
2005) 21st Nordic Semicond Meet, Sundvollen, Norway (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Room-temperature functional nanoelectronic devices and circuits with ballistic junctions
2005) 6th Intl Conf Trends in Nanotechnol, Ovieto, Spain (2005), invited keynote(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2004
-
Mark
Novel nanoelectronic triodes and logic devices with TBJs
(
- Contribution to journal › Article
-
Mark
Unified treatment of fluorescence and Raman scattering processes near metal surfaces
(
- Contribution to journal › Article
-
Mark
Electronic structure of [100]-oriented free-standing semiconductor nanowires
(
- Contribution to journal › Article
-
Mark
Giant polarization anisotropy in optical transitions of free-standing InP nanowires
(
- Contribution to journal › Article
-
Mark
Non-classical decay of excited atoms in photonic crystals
2004) 10th Intl Conf on Quantum Optics, Minsk, Belarus (2004), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Phase of scattering electron waves in quantum systems
2004) 1st NANOQUANTA-Øresund Workshop onn Many-body Quantum Transport, Lund, Sweden (2004), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Room-temperature nanoelectronic logic devices with ballistic junctions
2004) 8th International Conference on Nanometer-Scale Science and Technology, 2004(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Tunable spin polarization in a two-dimensional electron gas modulated by a ferromagnetic metal stripe and a Schottky metal stripe
(
- Contribution to journal › Article
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Mark
The growth of colloidal silver nano-wires and gold platelets with magnetic field
2004) March Meet of the American Physical Society, 2004(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Novel electronic and optoelectronic devices with nanometer-scale semiconductor structures
2004) Intl Conf on Scanning Probe Microsc, Sensors and Nanostr, Beijing, China (2004), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2003
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Mark
Tunable nonlinear current-voltage characteristics of three-terminal ballistic nanojunctions
(
- Contribution to journal › Article
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Mark
Decay kinetic properties of atoms in photonic crystals with absolute gaps
(
- Contribution to journal › Article
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Mark
Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
(
- Contribution to journal › Article
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Mark
Effects of breaking current conservation on the phase properties of two-terminal quantum systems
(
- Contribution to journal › Article
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Mark
Reflection phase of scattering electrons in a single-channel atomic wire
(
- Contribution to journal › Article
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Mark
Electronic structure of nanometer-scale semiconductor wires
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Quantum effects in the transport properties of nanoelectronic, three-terminal Y-junction devices
(
- Contribution to journal › Article
- 2002
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Mark
Quantum ratchets and quantum heat pumps
(
- Contribution to journal › Article
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Mark
Theoretical study of electronic structure of silicon nanocrystals
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
High frequency characterization of a GaInAs/InP electronic waveguide T-branch switch
(
- Contribution to journal › Article
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Mark
Diode and transistor behaviors of three-terminal ballistic junctions
(
- Contribution to journal › Article
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Mark
Electronic structure of nanometer-scale GaAs whiskers
(
- Contribution to journal › Article
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Mark
Single-electron tunneling effects in a metallic double dot device
(
- Contribution to journal › Article
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Mark
Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs
(
- Contribution to journal › Article
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Mark
A novel frequency-multiplication device based on three-terminal ballistic junction
(
- Contribution to journal › Article
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Mark
Characteristics of electron transport through vertical double-barrier quantum-dot structures: Effects of symmetric and asymmetric variations of the lateral confinement potentials
(
- Contribution to journal › Article
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Mark
A novel device principle for nanoelectronics
2002) In Materials Science and Engineering C: Materials for Biological Applications 19(1-2). p.417-420(
- Contribution to journal › Article
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Mark
Method of calculations for electron transport in multiterminal quantum systems based on real-space lattice models
(
- Contribution to journal › Article
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Mark
Negative differential capacitance of quantum dots
(
- Contribution to journal › Article
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Mark
Scattering-matrix formalism of electron transport through three-terminal quantum structures: formulation and application to Y-junction devices
(
- Contribution to journal › Article
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Mark
A novel electrical property of three-terminal ballistic junctions and its applications in nanoelectronics
(
- Contribution to journal › Article
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Mark
Coupling between lateral modes in a vertical resonant tunneling structure
(
- Contribution to journal › Article
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Mark
Quantum interference effects in electron transport through Y-branches
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Electronic structure of nanometer-sized semiconductor crystals
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Three-terminal ballistic junctions: new building blocks for functional devices in nanoelectronics
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
A novel frequency-doubling device based on three-terminal ballistic junction
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Phase properties of transmission and reflection coefficients in a three-terminal quantum system
2002) ICSNN-2002(
- Contribution to conference › Abstract
- 1991
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Mark
Electronic structure calculations on defects and impurities in semiconductors
1991)(
- Thesis › Doctoral thesis (compilation)