Nano Electronics
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- 2022
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Mark
A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Advantages of binary stochastic synapses for hardware spiking neural networks with realistic memristors
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- Contribution to journal › Article
- 2021
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Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
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- Contribution to journal › Article
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Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
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- Contribution to journal › Article
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Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation
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- Contribution to journal › Article
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Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration
2021) 2021 Device Research Conference (DRC)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Millimeter-Wave Vertical III-V Nanowire MOSFET Device-To-Circuit Co-Design
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- Contribution to journal › Article
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Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2
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- Contribution to journal › Article
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Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation
2021) 15th European Microwave Integrated Circuits Conference, EuMIC 2020 In EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference p.85-88(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
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- Contribution to journal › Article
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Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
2021)(
- Thesis › Doctoral thesis (compilation)
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Mark
Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2) : Raman spectroscopy and magnetic properties
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- Contribution to journal › Article
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Optimization of Near-Surface Quantum Well Processing
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- Contribution to journal › Article
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Improved quality of InSb-on-insulator microstructures by flash annealing into melt
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- Contribution to journal › Article
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Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
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- Contribution to journal › Article
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Mark
III-V Nanowire MOSFET High-Frequency Technology Platform
2021)(
- Thesis › Doctoral thesis (compilation)
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Mark
Capacitance Scaling in In0.71Ga0.29As/InP MOSFETs with Self-Aligned a:Si Spacers
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- Contribution to journal › Article
- 2020
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Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires
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- Contribution to journal › Article
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Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
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- Contribution to journal › Article
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Vertical nanowire III–V MOSFETs with improved high-frequency gain
(
- Contribution to journal › Article
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Electrical Characterisation of III-V Nanowire MOSFETs
2020) In Series of Licentiate and Doctoral Theses(
- Thesis › Doctoral thesis (compilation)
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Mark
III-V Nanowires for High-Speed Electronics
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- Thesis › Doctoral thesis (compilation)
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A phase-correlated duo-binary waveform generation technique for millimeter-wave radar pulses
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- Contribution to journal › Article
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Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
(
- Contribution to journal › Article
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Weyl Semi-Metal-Based High-Frequency Amplifiers
2020) 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 In Technical Digest - International Electron Devices Meeting, IEDM 2019-December.(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
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- Contribution to journal › Article
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A method for estimating defects in ferroelectric thin film MOSCAPs
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- Contribution to journal › Article
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Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
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- Contribution to journal › Article
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Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
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- Contribution to journal › Article
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Mobility of near surface MOVPE grown InGaAs/InP quantum wells
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- Contribution to journal › Article
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III-V Nanowire MOSFETs : RF-Properties and Applications
2020) 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Feature size control using surface reconstruction temperature in block copolymer lithography for InAs nanowire growth
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- Contribution to journal › Article
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Mark
Compressively-strained GaSb nanowires with core-shell heterostructures
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- Contribution to journal › Article
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Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
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- Contribution to journal › Article
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Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
(
- Contribution to journal › Article
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Mark
Low-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
(
- Contribution to journal › Article
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Mark
Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studies
(
- Contribution to journal › Article
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Mark
Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
(
- Contribution to journal › Article
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Mark
Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving Smin= 32 mV/dec and gm/ID= 100 V-1
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Low temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1-xAs nanowire devices
(
- Contribution to journal › Article
- 2019
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Mark
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
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- Contribution to journal › Article
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Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
(
- Contribution to journal › Article
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Mark
Trap-aware compact modeling and power-performance assessment of III-V tunnel FET
2019) 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) In Microelectronic Engineering(
- Contribution to journal › Article
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Mark
Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon
2019) 92nd ARFTG Microwave Measurement Conference, ARFTG 2019(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
(
- Contribution to journal › Article
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Mark
An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays : Digital and Analog Figures of Merit from 300K to 10K
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Integration of InSb on Si by Rapid Melt Growth
2019) 21th International Vacuum Congress(
- Contribution to conference › Abstract
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Mark
Pulsed Millimeter Wave Radar for Hand Gesture Sensing and Classification
(
- Contribution to journal › Letter