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- 2024
-
Mark
III-V Devices for Emerging Electronic Applications
2024)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Charge Carrier Diffusion Induced Light Emitting Diodes
2024)(
- Thesis › Doctoral thesis (compilation)
- 2023
-
Mark
Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform
(
- Thesis › Doctoral thesis (compilation)
-
Mark
Gas-Phase Anion Exchange for Multisegment Heterostructured CsPb(Br1−xClx)3 Perovskite Nanowires
2023) In Advanced Optical Materials(
- Contribution to journal › Article
-
Mark
Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
(
- Contribution to journal › Article
-
Mark
Branched-gallium phosphide nanowires seeded by palladium nanoparticles
(
- Contribution to journal › Article
-
Mark
Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires : Implications for Crystal-Phase Device Design
(
- Contribution to journal › Article
-
Mark
Radio Frequency InGaAs MOSFETs
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
In-situ Study of the Growth, Composition and Morphology of III-V Semiconductor Nanowires
2023)(
- Thesis › Doctoral thesis (compilation)
- 2022
-
Mark
Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices
(
- Contribution to journal › Article
-
Mark
Growth and Characterization of Tandem-Junction Photovoltaic Nanowires
2022)(
- Thesis › Doctoral thesis (compilation)
-
Mark
InGaAs Nanowire and Quantum Well Devices
2022)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Transport in nanowire-based quantum dot systems: Heating electrons and confining holes
2022)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Observation of the Multilayer Growth Mode in Ternary InGaAs Nanowires
(
- Contribution to journal › Article
-
Mark
Hot-carrier extraction in nanowires
2022)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Simulating Vapor-Liquid-Solid Growth of Au-Seeded InGaAs Nanowires
(
- Contribution to journal › Article
-
Mark
Nitrogen plasma passivation of GaAs nanowires resolved by temperature dependent photoluminescence
(
- Contribution to journal › Article
-
Mark
Low-Temperature Characteristics of Nanowire Network Demultiplexer for Qubit Biasing
(
- Contribution to journal › Article
-
Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
(
- Contribution to journal › Article
- 2021
-
Mark
Heat Driven Transport in Serial Double Quantum Dot Devices
(
- Contribution to journal › Article
-
Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
(
- Contribution to journal › Article
-
Mark
Design study of a nanowire three-terminal heterojunction bipolar transistor solar cell
2021) 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 In Conference Record of the IEEE Photovoltaic Specialists Conference p.1254-1257(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
2021)(
- Thesis › Doctoral thesis (compilation)
-
Mark
In situ passivation of GaxIn(1−x)P nanowires using radial AlyIn(1−y)P shells grown by MOVPE
(
- Contribution to journal › Article
-
Mark
Kinetic and Thermodynamic Modeling of Nanowire Growth
2021)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
(
- Contribution to journal › Article
-
Mark
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
(
- Contribution to journal › Article
- 2020
-
Mark
Self-Limiting Polymer Exposure for Vertical Processing of Semiconductor Nanowire-Based Flexible Electronics
(
- Contribution to journal › Article
-
Mark
Electrical Characterisation of III-V Nanowire MOSFETs
2020) In Series of Licentiate and Doctoral Theses(
- Thesis › Doctoral thesis (compilation)
-
Mark
Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
(
- Contribution to journal › Article
-
Mark
High resolution strain mapping of a single axially heterostructured nanowire using scanning X-ray diffraction
(
- Contribution to journal › Article
-
Mark
III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
(
- Contribution to journal › Article
-
Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
(
- Contribution to journal › Article
-
Mark
Embedded sacrificial AlAs segments in GaAs nanowires for substrate reuse
(
- Contribution to journal › Article
-
Mark
Direct Three-Dimensional Imaging of an X-ray Nanofocus Using a Single 60 nm Diameter Nanowire Device
(
- Contribution to journal › Article
-
Mark
Implementing an Insect Brain Computational Circuit Using III-V Nanowire Components in a Single Shared Waveguide Optical Network
(
- Contribution to journal › Article
-
Mark
Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
(
- Contribution to journal › Article
- 2019
-
Mark
Dimension Engineering of High-Quality InAs Nanostructures on a Wafer Scale
(
- Contribution to journal › Article
-
Mark
Transition to the quantum hall regime in InAs nanowire cross-junctions
(
- Contribution to journal › Article
-
Mark
Strain and Charge Transport in InAsP-InP and InP-InAs Core-Shell Nanowires
2019)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
(
- Contribution to journal › Article
-
Mark
Simulation of GaAs Nanowire Growth and Crystal Structure
(
- Contribution to journal › Article
-
Mark
Combining Nanofocused X-Rays with Electrical Measurements at the NanoMAX Beamline
(
- Contribution to journal › Article
-
Mark
Characterization of Nanowire Devices Using Nano-Focused X-Ray Beams
2019) 2019 Compound Semiconductor Week, CSW 2019(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical III-V Nanowire MOSFETs
2019) In Series of licentiate and doctoral theses(
- Thesis › Doctoral thesis (compilation)
-
Mark
Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement
(
- Contribution to journal › Article
-
Mark
Kinetics of Au-Ga Droplet Mediated Decomposition of GaAs Nanowires
(
- Contribution to journal › Article
-
Mark
Simultaneous Growth of Pure Wurtzite and Zinc Blende Nanowires
(
- Contribution to journal › Article
-
Mark
Quasi One-Dimensional Metal-Semiconductor Heterostructures
(
- Contribution to journal › Article
- 2018
-
Mark
Thermoelectric experiments on nanowire-based quantum dots
2018)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Electrical and optical evaluation of n-type doping in InxGa(1-x)P nanowires
(
- Contribution to journal › Article
-
Mark
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
(
- Contribution to journal › Article
-
Mark
Nanowire morphology and particle phase control by tuning the in concentration of the foreign metal nanoparticle
(
- Contribution to journal › Article
-
Mark
Growth and optical properties of III-V semiconductor nanowires: : Studies relevant for solar cells
2018)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Spectrally resolved x-ray beam induced current in a single InGaP nanowire
(
- Contribution to journal › Article
-
Mark
Nanobeam X-ray Fluorescence Dopant Mapping Reveals Dynamics of in Situ Zn-Doping in Nanowires
(
- Contribution to journal › Article
-
Mark
Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements
(
- Contribution to journal › Article
-
Mark
Far Infrared Intersubband Photodetectors Based on Quantum Disc in Nanowire Arrays with Photoresponse to Normal Incidence Radiation
2018) Optics and photonics in terminational congress 2018 (OPIC 2018)(
- Contribution to conference › Abstract
-
Mark
III-V Nanowire Solar Cells: Growth and Characterization
2018)(
- Thesis › Doctoral thesis (compilation)
-
Mark
InP/GaInP nanowire tunnel diodes
(
- Contribution to journal › Article
-
Mark
A Self-aligned Gate-last Process applied to All-III-V CMOS on Si
(
- Contribution to journal › Article
- 2017
-
Mark
Growth of wurtzite AlxGa1-xP nanowire shells and characterization by Raman spectroscopy
(
- Contribution to journal › Article
-
Mark
Conduction Band Offset and Polarization Effects in InAs Nanowire Polytype Junctions
(
- Contribution to journal › Article
-
Mark
Simplifying Nanowire Hall Effect Characterization by Using a Three-Probe Device Design
(
- Contribution to journal › Article
-
Mark
InxGa1-xP Nanowire Growth Dynamics Strongly Affected by Doping Using Diethylzinc
(
- Contribution to journal › Article
-
Mark
Growth and optical properties of InxGa1−xP nanowires synthesized by selective-area epitaxy
(
- Contribution to journal › Article
-
Mark
Towards high efficiency nanowire solar cells
(
- Contribution to journal › Article
-
Mark
Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects
(
- Contribution to journal › Article
-
Mark
Atomic Scale Characterization of III-V Nanowire Surfaces
2017)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Electronic Structure Changes Due to Crystal Phase Switching at the Atomic Scale Limit
(
- Contribution to journal › Article
-
Mark
Parallel-Coupled Quantum Dots in InAs Nanowires
(
- Contribution to journal › Article
-
Mark
Dynamical Tuning of Nanowire Lasing Spectra
(
- Contribution to journal › Article
-
Mark
Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction
(
- Contribution to journal › Article
-
Mark
Gated Hall effect measurements on selectively grown InGaAs nanowires
(
- Contribution to journal › Article
-
Mark
X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire
(
- Contribution to journal › Article
-
Mark
Carrier Recombination Processes in Gallium Indium Phosphide Nanowires
(
- Contribution to journal › Article
-
Mark
Vertical III-V Nanowire Tunnel Field-Effect Transistor
2017)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article
-
Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
2017) In Nano Letters(
- Contribution to journal › Letter
- 2016
-
Mark
Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire
(
- Contribution to journal › Article
-
Mark
Ballistic modeling of InAs nanowire transistors
(
- Contribution to journal › Article
-
Mark
Vertical III-V/High-k Nanowire MOS Capacitors and Transistors
2016) In Lund University Faculty of Medicine Doctoral Dissertation Series(
- Thesis › Doctoral thesis (monograph)
-
Mark
Electrical Characterization of III-V Nanostructure
2016)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
(
- Contribution to journal › Letter
-
Mark
III-V Nanowire-based Infrared Photodetectors : Design, Fabrication and Characterization
2016)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Nonlinear thermoelectric response due to energy-dependent transport properties of a quantum dot
(
- Contribution to journal › Article
-
Mark
Local Magnetic Suppression of Topological Surface States in Bi2Te3 Nanowires
(
- Contribution to journal › Article
-
Mark
Silver as Seed-Particle Material for GaAs Nanowires - Dictating Crystal Phase and Growth Direction by Substrate Orientation
(
- Contribution to journal › Article
-
Mark
Demonstration of Sn-seeded GaSb homo- and GaAs-GaSb heterostructural nanowires
(
- Contribution to journal › Article
-
Mark
Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
(
- Contribution to journal › Article
-
Mark
3-D Integrated Track-and-Hold Circuit Using InAs Nanowire MOSFETs and Capacitors
(
- Contribution to journal › Article
-
Mark
Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography
(
- Contribution to journal › Article
-
Mark
High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
(
- Contribution to journal › Article
-
Mark
High frequency III-V nanowire MOSFETs
(
- Contribution to journal › Scientific review
-
Mark
Schottky barrier and contact resistance of InSb nanowire field-effect transistors
(
- Contribution to journal › Article
-
Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
(
- Contribution to journal › Letter
-
Mark
Focused Ion Beam Preparation and Transmission Electron Microscopy of Materials for Energy Applications
2016)(
- Thesis › Doctoral thesis (compilation)
-
Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
(
- Contribution to journal › Article
- 2015
-
Mark
Vertical InAs Nanowire Devices and RF Circuits
(
- Thesis › Doctoral thesis (compilation)
-
Mark
Structural Properties of Wurtzite InP-InGaAs Nanowire Core-Shell Heterostructures
(
- Contribution to journal › Article